Surface treatment of nanocrystal quantum dots after film deposition
Provided are methods of surface treatment of nanocrystal quantum dots after film deposition so as to exchange the native ligands of the quantum dots for exchange ligands that result in improvement in charge extraction from the nanocrystals.
1. A method of constructing a device, comprising:
contacting a population of quantum dots with an exchange composition that comprises at least one exchange ligand,
the population of quantum dots surmounting a porous substrate,
the population of quantum dots comprising at least one first ligand bound to a surface of a quantum dot,
the contacting being performed under such conditions that the at least one first ligand is exchanged with the at least one exchange ligand,
placing the substrate into electronic communication with a first electrode,
configuring the device so as to be capable of exposing the substrate to illumination, and
introducing an electrolyte, a hole transfer material, or both, so as to place the substrate and the first electrode in electronic communication with one another.
2. The method of claim 1 , wherein the substrate comprises a metal oxide.
3. The method of claim 1 , wherein the exchange composition comprises an acid.
4. The method of claim 1 , wherein the exchange composition comprises a salt.
5. The method of claim 1 , wherein a quantum dot comprises MgO, MgS, MgSe, MgTe, CaO, CaS, CaSe, CaTe, SrO, SrS, SrSe, SrTe, BaO, BaS, BaSe, BaTe, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgO, HgS, HgSe, HgTe, Al 2 O 3 , Al 2 S 3 , Al 2 Se 3 , Al 2 Te 3 , Ga 2 O 3 , Ga 2 S 3 , Ga 2 Se 3 , Ga 2 Te 3 , In 2 O 3 , In 2 S 3 , In 2 Se 3 , In 2 Te 3 , SiO 2 , GeO 2 , SnO 2 , Sb 2 S 3 , Sb 2 Se 3 , Sb 2 Te 3 , SnS, SnSe, SnTe, PbO, PbO 2 , PbS, PbSe, PbTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, BP, Si, or any combination thereof.
6. The method of claim 1 , further comprising placing the substrate into electronic communication with a second electrode.
7. A photoelectronic device, comprising:
a porous substrate;
a population of quantum dots bearing exchange ligands and surmounting the substrate,
at least some of the population of quantum dots having been contacted with a composition under such conditions so as to effect a reduction in the number of first ligands bound to the surface of the quantum dots and an increase in the number of exchange ligands bound to the surface of the quantum dots,
the substrate being in electronic communication with a first electrode, and
the device being configured so as to be capable of exposing the substrate to illumination; and
an electrolyte, a hole transfer material, or both, that places the substrate and the first electrode in electronic communication with one another.
8. The device of claim 7 , wherein at least some of the quantum dots are at least partially surmounted by first ligands and at least partially surmounted by exchange ligands.
9. The device of claim 7 , wherein the device exhibits an improvement in efficiency of charge transfer from quantum dot to hole transporting material relative to a comparable device wherein essentially all of the quantum dots are surmounted essentially entirely by first ligands.
10. The device of claim 7 , wherein an exchange ligand comprises a carboxyl group.
11. The device of claim 7 , wherein a first ligand comprises an aliphatic portion.
12. The device of claim 7 , further comprising a second electrode.
13. The device of claim 7 , further comprising an electrolyte, a hole transfer material, or both, that places the substrate and the first electrode in electronic communication with one another.
14. The device of claim 7 , wherein the substrate comprises a metal oxide.
15. The device of claim 7 , wherein a structure of the substrate comprise a nanocrystalline film.
16. The device of claim 7 , wherein the population of quantum dots comprises MgO, MgS, MgSe, MgTe, CaO, CaS, CaSe, CaTe, SrO, SrS, SrSe, SrTe, BaO, BaS, BaSe, BaTe, ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe, HgO, HgS, HgSe, HgTe, Al 2 O 3 , Al 2 S 3 , Al 2 Se 3 , Al 2 Te 3 , Ga 2 O 3 , Ga 2 S 3 , Ga 2 Se 3 , Ga 2 Te 3 , In 2 O 3 , In 2 S 3 , In 2 Se 3 , In 2 Te 3 , SiO 2 , GeO 2 , SnO 2 , Sb 2 S 3 , Sb 2 Se 3 , Sb 2 Te 3 , SnS, SnSe, SnTe, PbO, PbO 2 , PbS, PbSe, PbTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, BP, Si, or any combination thereof.
17. A method of constructing a device, comprising:
contacting a population of quantum dots with an exchange composition that comprises an acid and at least one exchange ligand,
the population of quantum dots surmounting a porous substrate,
the population of quantum dots comprising at least one first ligand bound to a surface of a quantum dot,
the contacting being performed under such conditions that the at least one first ligand is exchanged with the at least one exchange ligand,
placing the porous substrate into electronic communication with a first electrode,
configuring the device so as to be capable of exposing the porous substrate to illumination; and
introducing an electrolyte, a hole transfer material, or both, so as to place the porous substrate and the first electrode in electronic communication with one another.
18. A method of constructing a device, comprising:
contacting a population of quantum dots with an exchange composition that comprises at least one exchange ligand,
the population of quantum dots surmounting a porous substrate,
the population of quantum dots comprising at least one first ligand bound to a surface of a quantum dot,
the quantum dot comprising CdO, CdS, CdSe, CdTe, HgO, HgS, HgSe, HgTe, Al 2 Se 3 , Ga 2 Se 3 , In 2 Se 3 , Sb 2 S 3 , Sb 2 Se 3 , Sb 2 Te 3 , SnSe, SnTe, PbO, PbO 2 , PbS, PbSe, PbTe, AlSb, GaAs, GaSb, or any combination thereof,
the contacting being performed under such conditions that the at least one first ligand is exchanged with the at least one exchange ligand;
placing the porous substrate into electronic communication with a first electrode;
configuring the device so as to be capable of exposing the porous substrate to illumination; and
introducing an electrolyte, a hole transfer material, or both, so as to place the porous substrate and the first electrode in electronic communication with one another.