Solid-state imaging device, method of manufacturing solid-state imaging device, apparatus for manufacturing semiconductor device, method of manufacturing semiconductor device, and electronic device

1. A solid-state imaging device comprising:

a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer;

a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate;

a connection unit region in which a connection section is provided, the connection section having a first through electrode provided to reach from a light receiving surface side of the sensor-side semiconductor layer to the sensor-side wiring layer, a second through electrode provided to reach from the light receiving surface side of the sensor-side semiconductor layer to the circuit-side wiring layer, and a connection electrode provided on a surface of the light receiving surface side of the sensor-side semiconductor layer and connecting the first through electrode and the second through electrode; and

an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.

2. The solid-state imaging device according to claim 1 , wherein (a) the step portion is provided in a manner such that the insulating layer gradually thins from the connection unit region to a region adjacent to the connection unit region, and (b) the connection unit region is provided with a convex portion.

3. The solid-state imaging device according to claim 2 ,

wherein a plurality of the connection unit regions are provided, and

wherein each connection unit region is arranged along a predetermined side corresponding to the pixel region of a division.

4. The solid-state imaging device according to claim 3 , wherein the step portion is provided at a position that encloses the connection unit region.

5. The solid-state imaging device according to claim 4 , wherein a planar shape of the convex portion is a rectangular shape with rounded corners and extending in a direction along a side corresponding to the pixel region.

6. The solid-state imaging device according to claim 5 ,

wherein the insulating layer has a laminated structure formed of different materials, and

wherein a film constituting an upper-layer portion of the laminated structure is removed from the insulating layer in a lower portion of the step portion.

7. A method of manufacturing a solid-state imaging device, comprising:

bonding a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer with a circuit-side semiconductor layer and a circuit-side wiring layer in a manner such that a surface of the sensor-side wiring layer faces a surface of the circuit-side wiring layer;

forming an insulating layer on a light receiving surface side of the sensor substrate;

forming a connection section in a connection unit region outside the pixel region, the connection section having a first through electrode provided to reach from a surface of the insulating layer to the sensor-side wiring layer, a second through electrode provided to reach from the surface of the insulating layer to the circuit-side wiring layer, and a connection electrode provided on the surface of the insulating layer and connecting the first through electrode and the second through electrode; and

etching the insulating layer to a predetermined depth in a manner that a film thickness gradually thins from the connection unit region to the pixel region.

8. An electronic device comprising:

a solid-state imaging device; and

a signal processing circuit configured to process an output signal output from the solid-state imaging device,

wherein the solid-state imaging device includes

a sensor substrate having a sensor-side semiconductor layer including a pixel region in which a photoelectric conversion section is provided and a sensor-side wiring layer provided on an opposite surface side from a light receiving surface of the sensor-side semiconductor layer,

a circuit substrate having a circuit-side semiconductor layer and a circuit-side wiring layer and provided on a side of the sensor-side wiring layer of the sensor substrate,

a connection unit region in which a connection section is provided, the connection section having a first through electrode provided to reach from a light receiving surface side of the sensor-side semiconductor layer to the sensor-side wiring layer, a second through electrode provided to reach from the light receiving surface side of the sensor-side semiconductor layer to the circuit-side wiring layer, and a connection electrode provided on a surface of the light receiving surface side of the sensor-side semiconductor layer and connecting the first through electrode and the second through electrode, and

an insulating layer having a step portion which has the connection electrode embedded therein and has a film thickness that gradually decreases from the connection unit region to the pixel region.