Process for fabricating a semiconductor structure employing a temporary bond

1. A method of fabricating a semiconductor structure, comprising:

providing a handle substrate comprising a seed substrate and a weakened sacrificial layer covering the seed substrate;

joining the handle substrate with a carrier substrate;

treating the carrier substrate while it remains joined to the handle substrate;

after treating the carrier substrate, joining the carrier substrate to a host substrate while the carrier substrate remains adjoined to the handle substrate;

after joining the carrier substrate to the host substrate, detaching the handle substrate at the weakened sacrificial layer to form the semiconductor structure; and

removing any residue of the sacrificial layer present on the seed substrate.

2. The method of claim 1 , wherein the sacrificial layer is weakened by introducing atomic species into the sacrificial layer of the handle substrate.

3. The method of claim 2 , wherein introducing atomic species into the sacrificial layer comprises exposing an area of the handle substrate to atomic species implantation at a dose of between 1×10 15 ions/cm 2 and 1×10 17 ions/cm 2 and an energy of between 5 keV and 500 keV.

4. The method of claim 2 , wherein introducing atomic species into the sacrificial layer comprises diffusing atomic species into the handle substrate by bringing the handle surface into contact with a chemical species and penetrating the chemical species into the handle wafer by chemical diffusion.

5. The method of claim 2 , wherein introducing atomic species into the sacrificial layer comprises:

creating a confinement layer in the handle substrate prior to introducing atomic species into the sacrificial layer; and

exposing the handle substrate to a temperature of at least 200° C. to promote migration of the introduced species toward the confinement layer after introducing atomic species into the sacrificial layer.

6. The method of claim 1 , wherein the seed substrate has a thermal expansion coefficient CTE 1 near the thermal expansion coefficient CTE 2 of the carrier substrate such that (CTE 1 −CTE 2 )/CTE 1 <50%.

7. The method of claim 1 , wherein the handle substrate comprises an intermediate layer placed between the seed substrate and the sacrificial layer to promote adhesion of the sacrificial layer to the seed substrate.

8. The method of claim 1 , wherein the sacrificial layer has a weak zone and defines a layer located between a surface of the handle substrate and the weak zone.

9. The method of claim 1 , wherein the seed substrate is chosen to have a thermal expansion coefficient CTE 1 near the thermal expansion coefficient CTE 2 of the host substrate.

10. The method of claim 1 , wherein the carrier substrate comprises an integrated-circuit.

11. The method of claim 1 , wherein detaching the handle substrate at the weakened sacrificial layer comprises supplying energy by annealing at a temperature of at least 200° C.

12. The method of claim 1 , wherein joining the handle substrate with the carrier substrate comprises bonding the handle substrate to the carrier substrate.

13. The method of claim 12 , wherein joining the handle substrate with a carrier substrate comprises bonding the handle substrate with the carrier substrate by molecular adhesion.

14. The method of claim 1 , wherein the seed substrate is selected from the group consisting of:

a single-crystal substrate;

an amorphous or polycrystalline substrate;

a ceramic; and

a metal.

15. The method of claim 1 , further comprising treating the carrier substrate.

16. A method of fabricating a semiconductor structure, comprising:

providing a handle substrate comprising a seed substrate and a weakened sacrificial layer covering the seed substrate, wherein the sacrificial layer comprises a polysilicon layer;

joining the handle substrate with a carrier substrate;

joining the carrier substrate to a host substrate while the carrier substrate remains adjoined to the handle substrate;

after joining the carrier substrate to the host substrate, detaching the handle substrate at the weakened sacrificial layer to form the semiconductor structure; and

removing any residue of the sacrificial layer present on the seed substrate.