IP Library › Granted Patent US 8,952,521
Granted Patent B2
US 8,952,521 · App. 13/736,553 · Granted Feb 10, 2015

Semiconductor packages with integrated antenna and method of forming thereof

Inventors: Maciej Wojnowski (Munich, DE); Walter Hartner (Bad Abbach, DE); Ottmar Geitner (Pentling, DE); Gottfried Beer (Nittendorf, DE); Klaus Pressel (Regensburg, DE); Mehran Pour Mousavi (Munich, DE)
Assignee: Infineon Technologies AG
H01L23/49816H01L21/76885H01L21/76802H01L23/49827H01Q1/2283H01Q9/0407H01Q9/16H01Q23/00H01L2924/0002H01L23/3128
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Quick Facts
Patent No.
US 8,952,521
App. No.
13/736,553
Granted
Feb 10, 2015
Kind
B2
Abstract

In one embodiment of the present invention, a semiconductor package includes a substrate having a first major surface and an opposite second major surface. A chip is disposed in the substrate. The chip includes a plurality of contact pads at the first major surface. A first antenna structure is disposed at the first major surface. A reflector is disposed at the second major surface.

Claims (80)

1. A semiconductor package comprising:

a substrate having a first major surface and an opposite second major surface;

a first chip disposed in the substrate, the first chip comprising a plurality of contact pads at the first major surface;

a first antenna structure disposed in the substrate, wherein the first antenna structure is disposed at the first major surface, and wherein the reflector is disposed at the second major surface; and

a reflector disposed in the substrate.

2. The semiconductor package according to claim 1 , further comprising:

an encapsulant disposed around a sidewall of the first chip, the encapsulant forming the substrate; and

through encapsulant vias disposed in the encapsulant and coupled to the plurality of contact pads.

3. The semiconductor package according to claim 2 , further comprising a redistribution layer disposed over the first major surface, wherein the through encapsulant vias are coupled to the plurality of contact pads through the redistribution layer, and wherein the antenna structure is part of the redistribution layer.

4. The semiconductor package according to claim 3 , further comprising a second antenna structure disposed in the redistribution layer.

5. The semiconductor package according to claim 2 , further comprising an embedded heatsink disposed in the encapsulant proximate the first chip.

6. The semiconductor package according to claim 1 , wherein the first antenna structure comprises a dipole antenna, a folded dipole antenna, a ring antenna, a rectangular loop antenna, a patch antenna, or a coplanar patch antenna.

7. The semiconductor package according to claim 1 , wherein the first antenna structure comprises an antenna array.

8. The semiconductor package according to claim 1 , further comprising a second chip comprising a passive device and/or an active device disposed proximate the first chip.

9. A semiconductor package comprising:

a substrate having a first major surface and an opposite second major surface;

a first chip disposed in the substrate, the first chip comprising a plurality of contact pads at the first major surface;

a first antenna structure disposed in the substrate; and

a reflector disposed in the substrate, wherein the antenna structure comprises a component configured to emit radiation in a direction perpendicular to the first major surface.

10. The semiconductor package according to claim 9 , further comprising a second antenna structure, wherein the first antenna structure comprises a first component configured to emit radiation in a first direction perpendicular to the first major surface, and wherein the second antenna structure comprises a second component to emit radiation in a second direction parallel to first major surface.

11. A semiconductor package comprising:

a substrate having a first major surface and an opposite second major surface;

a first chip disposed in the substrate, the first chip comprising a plurality of contact pads at the first major surface;

a heatsink disposed over the first chip:

a first antenna structure disposed in the substrate; and

a reflector disposed in the substrate.

12. A semiconductor package comprising:

a substrate having a first major surface and an opposite second major surface;

a first chip disposed in the substrate, the first chip comprising a plurality of contact pads at the first major surface;

a first antenna structure disposed in the substrate;

a dielectric lens disposed over the first antenna structure: and

a reflector disposed in the substrate.

13. A semiconductor package comprising:

a substrate having a first major surface and an opposite second major surface;

a first chip disposed in the substrate, the first chip comprising a plurality of contact pads at the first major surface;

a first antenna structure disposed in the substrate;

a first via bar disposed in the substrate, wherein the first antenna structure is disposed within the first via bar; and

a reflector disposed in the substrate.

14. The semiconductor package according to claim 13 , further comprising a second antenna structure disposed within the first via bar.

15. The semiconductor package according to claim 13 , further comprising:

a second via bar disposed in the substrate;

a second antenna structure disposed within the second via bar; and

a third antenna structure disposed in the package.

16. A semiconductor system comprising:

a semiconductor package comprising

a substrate comprising an encapsulant, the substrate having a first major surface and an opposite second major surface,

a chip disposed in the substrate, the chip comprising a plurality of contact pads at the first major surface,

a first antenna structure proximate the first major surface,

a reflector proximate the second major surface, and

a plurality of external contacts at the second major surface; and

a printed circuit board having a front side and back side, the printed circuit board comprising

contact pads at the front side electrically coupled to the plurality of external contacts, wherein the front side faces the second major surface of the semiconductor package.

17. The semiconductor system according to claim 16 , wherein the printed circuit board further comprises:

thermal contact pads at the front side thermally coupled to the second major surface of the substrate;

a backplate disposed at the back side of the printed circuit board; and

a plurality of through vias coupling the thermal contact pads with the backplate.

18. The semiconductor system according to claim 16 , further comprising through encapsulant vias disposed in the encapsulant and coupled to the plurality of contact pads, wherein the encapsulant is disposed around a sidewall of the chip.

19. The semiconductor system according to claim 16 , further comprising:

a plurality of solder balls disposed on the plurality of external contacts; and

a plurality of thermal solder balls disposed on the reflector, wherein the semiconductor package is attached to the printed circuit board using the plurality of solder balls and the plurality of thermal solder balls.

20. A method of forming a semiconductor package, the method comprising:

forming a reconstituted substrate comprising a first chip embedded in an encapsulant, the reconstituted substrate comprising a first major surface and an opposite second major surface, the first chip comprising a plurality of contact pads at the first major surface;

forming a front side redistribution layer over the first major surface of the reconstituted substrate, the front side redistribution layer comprising an antenna structure; and

forming a back side redistribution layer under the second major surface of the reconstituted substrate, the back side redistribution layer comprising a reflector.

21. The method of claim 20 , wherein forming the back side redistribution layer comprises forming a plurality of external contacts at the second major surface.

22. The method of claim 21 , further comprising

forming a plurality of solder balls on the plurality of external contacts; and

forming a plurality of thermal solder balls on the second major surface.

23. The method of claim 20 , further comprising embedding via bars, passives, and/or dies in the encapsulant of the reconstituted substrate.

24. The method of claim 20 , wherein forming the reconstituted substrate comprises embedding a heatsink in the encapsulant.

25. The method of claim 20 , further comprising forming a dielectric lens over the antenna structure.

26. A method of forming a semiconductor package, the method comprising:

forming a substrate having a first major surface and an opposite second major surface, the substrate comprising a first chip, the first chip comprising a plurality of contact pads at the first major surface;

forming a first antenna structure in the substrate, wherein forming the first antenna structure comprises forming the first antenna structure within a first redistribution layer at the first major surface; and

forming a reflector in the substrate.

27. The method of claim 26 , wherein forming the reflector comprises forming the reflector within a second redistribution layer at the second major surface.

28. A method of forming a semiconductor package, the method comprising:

forming a substrate having a first major surface and an opposite second major surface, the substrate comprising a first chip, the first chip comprising a plurality of contact pads at the first major surface;

forming a first antenna structure in the substrate, wherein forming the first antenna structure comprises forming the first antenna structure within a via bar, the via bar being formed within the substrate; and

forming a reflector in the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 8, 2013
From: WOJNOWSKI, MACIEJ; HARTNER, WALTER; GEITNER, OTTMAR; BEER, GOTTFRIED; PRESSEL, KLAUS; POUR MOUSAVI, MEHRAN
To: INFINEON TECHNOLOGIES AG
Reel/Frame 029588/0873 →
Priority Claims (1)
EP 12007249 · Oct 19, 2012 · regional
Continuity (1)
Related Publication 20140110840A1 · Apr 24, 2014