Semiconductor device and a method of manufacturing the same

1. A semiconductor device comprising:

(1) a glass substrate having an electrode, and

(2) a semiconductor chip disposed on the glass substrate,

the semiconductor chip including:

(a) a semiconductor substrate including an alignment mark formation region and an integrated circuit formation region;

(b) a MISFET formed over the semiconductor substrate, the MISFET being formed in the integrated circuit formation region;

(c) a first wiring layer formed over the MISFET, the first wiring layer formed in the integrated circuit formation region;

(d) a plurality of first patterns formed over the semiconductor substrate and in the same layer as the first wiring layer, the plurality of first patterns being formed in the alignment mark formation region;

(e) a first interlayer insulating film formed over the semiconductor substrate to cover the first wiring layer and the plurality of first patterns;

(f) a second wiring layer formed over the first interlayer insulating film, the second wiring layer being formed in the integrated circuit formation region;

(g) a plurality of second patterns formed over the first interlayer insulating film and in the same layer as the second wiring layer, the plurality of second patterns being formed in the alignment mark formation region;

(h) a second interlayer insulating film formed over the semiconductor substrate to cover the second wiring layer and the plurality of second patterns;

(i) a third wiring layer formed over the second interlayer insulating film, the third wiring layer being formed in the integrated circuit formation region;

(j) an alignment mark formed over the second interlayer insulating film and in the same layer as the third wiring layer, the alignment mark being formed in the alignment mark formation region;

(k) a further insulating film formed over the semiconductor substrate to cover the third wiring and the alignment mark, the further insulating film having an opening at an upper side of the third wiring layer; and

(l) a bump electrode formed over the further insulating film and electrically connected to the third wiring layer via the opening,

wherein the plurality of first patterns and the plurality of second patterns are formed so as to be shifted from each other in a plan view,

wherein the first wiring, the second wiring and the third wiring are electrically connected to the MISFET,

wherein the plurality of first patterns and the plurality of second patterns are not electrically connected to the MISFET, and

wherein the bump electrode of the semiconductor chip and the electrode of the glass substrate are electrically connected via an anisotropic conductive film formed between the semiconductor chip and the glass substrate.

2. A semiconductor device according to claim 1 ,

wherein the first patterns and the second patterns are dot-shaped, respectively.

3. A semiconductor device according to claim 1 ,

wherein the first patterns and the second patterns are further positioned directly under the alignment mark.

4. A semiconductor device according to claim 1 , wherein the semiconductor device is an LCD driver for a liquid crystal display device.

5. A semiconductor device according to claim 1 ,

wherein the semiconductor substrate has four corners,

wherein the alignment mark is formed in a vicinity of one of the four corners,

wherein a guard ring is formed in the same layers as the first wiring layer, the second wiring layer and the third wiring layer,

wherein the guard ring is formed so as to surround the alignment mark formation region and the integrated circuit formation region,

wherein the alignment mark formation region is arranged between the guard ring and the integrated circuit formation region, and

wherein the integrated circuit formation region is not arranged between the alignment mark formation region and the guard ring.

6. A semiconductor device according to claim 1 ,

wherein the third wiring layer and the alignment mark are formed in a top wiring layer.

7. A semiconductor device according to claim 1 ,

wherein a thickness of the first patterns are smaller than a thickness of the alignment mark, and

wherein a thickness of the second patterns are smaller than the thickness of the alignment mark.

8. A semiconductor device according to claim 1 ,

wherein an integrated circuit formed in the integrated circuit formation region comprises an LCD driver for a liquid crystal display device, and

wherein the integrated circuit does not comprise the plurality of first patterns and the plurality of second patterns.

9. A semiconductor device according to claim 1 ,

wherein, in the lower layer of the first and second patterns, a plurality of third patterns are further formed in the alignment mark formation region, which is formed in the same layer as that of a gate electrode of the MISFET formed in the integrated circuit formation region.

10. The semiconductor device according to claim 9 ,

wherein, in the lower layer of the third patterns, a plurality of fourth patterns are further formed in the alignment mark formation region, which is formed in the same layer as that of a plurality of element isolation regions formed in the integrated circuit formation region.

11. The semiconductor device according to claim 10 ,

wherein the element isolation regions are formed by embedding an insulation material into a trench formed in the semiconductor substrate.