Composition for advanced node front-and back-end of line chemical mechanical polishing
The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
1. A slurry for polishing a substrate for semiconductor integrated circuit devices at the front end of the line during the fabrication process, the slurry comprising:
a) 0.2 wt % to 30 wt %, based on the total weight of the slurry, of an abrasive selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof, and mixtures thereof;
b) 0.00033 wt % to 20 wt %, based on the total weight of the slurry, of an acid comprising hydrochloric acid, nitric acid, sulfuric acid, phosphonic acid, phosphoric acid, organo-phosphoric acid, and mixtures thereof;
c) 0.000033 wt % to 5 wt %, based on the total weight of the slurry, of a stabilizer selected from the group consisting of C 1 -C 12 alkanols and derivatives thereof, ethanolamine, methylaminoethanol, dimethylaminoethanol, isopropanolamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, and any mixtures thereof; and
d) water,
wherein the pH of the slurry is between 2.2 and 3.5, and
wherein said slurry exhibits a removal rate selectivity ratio of from 1:1 to 2:1 for oxide to polysilicon, and
wherein said slurry exhibits a removal rate selectivity ratio of from 1:1 to 2:1 for oxide to nitride.
2. The slurry according to claim 1 , wherein the abrasive is colloidal silica.
3. The slurry according to claim 1 , wherein the acid is present in the concentrate in an amount of 0.0017 wt % to 3 wt %, based on the total weight of the concentrate.
4. The slurry according to claim 1 , further comprising a biocide selected from the group consisting of organotin, salicylanilides, mercaptan, quaternary ammonium compound, hydrogen peroxide, and any mixtures thereof.
5. The slurry according to claim 4 , wherein the biocide is hydrogen peroxide.
6. The slurry according to claim 4 , wherein the biocide is present in an amount of 0.001 wt % to 8 wt %, based on the total weight of the slurry.
7. The slurry according to claim 1 , further comprising an additive selected from the group consisting of cationic surfactants, anionic surfactants, nonionic surfactants, poly-electrolytes, amphoteric surfactants, benzotriazole, triazole, benzimidazole, hydrogen peroxide, glycerol, and compounds and mixtures thereof.
8. A slurry for polishing a substrate for semiconductor integrated circuit devices at the front end of the line during the fabrication process, the slurry comprising:
a) 0.5 wt % to 10 wt %, based on the total weight of the slurry, an abrasive selected from the group consisting of alumina, silica, titania, ceria, zirconia, co-formed products thereof, and mixtures thereof;
b) 0.005 wt % to 1.0 wt %, based on the total weight of the slurry, of an acid comprising hydrochloric acid, nitric acid, sulfuric acid, phosphonic acid, phosphoric acid, organo-phosphoric acid, and mixtures thereof;
c) 0.0025 wt % to 2 wt %, based on the total weight of the slurry, of a stabilizer selected from the group consisting of C 1 -C 12 alkanols and derivatives thereof, ethanolamine, methylaminoethanol, dimethylaminoethanol, isopropanolamine, tetramethylammonium hydroxide, tetrabutylammonium hydroxide, and any mixtures thereof; and
d) water,
wherein the pH of the slurry is between 2.2 and 3.5,
wherein said slurry exhibits a removal rate selectivity ratio of from 1:1 to 2:1 for oxide to polysilicon, and
wherein said slurry exhibits a removal rate selectivity ratio of from 1:1 to 2:1 for oxide to nitride.