Semiconductor nanocrystal, method of manufacture thereof and articles including the same
A semiconductor nanocrystal including a core including ZnSe, ZnTe, ZnS, ZnO, or a combination comprising at least one of the foregoing, wherein the core has a diameter of about 2 nanometers to about 5 nanometers and an emitted light wavelength of about 405 nanometers to about 530 nanometers; and a first layer disposed on the core, the first layer including a Group III-V semiconductor, wherein the semiconductor nanocrystal has a full width at half maximum of an emitted light wavelength of less than or equal to about 60 nanometers.
1. A semiconductor nanocrystal comprising:
a core comprising ZnSe, ZnTe, ZnS, ZnO, or a combination thereof, wherein the core has a diameter of about 2 nanometers to about 5 nanometers and an emitted light wavelength of about 405 nanometers to about 530 nanometers;
a first layer disposed on the core, the first layer comprising AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, or a combination thereof and having a thickness of about 0.3 nanometers to about 2 nanometers; and
a second layer disposed on the first layer, the second layer comprising a Group II-VI or a Group III-V semiconductor material,
wherein a material of the second layer has a band gap energy which is greater than a band gap energy of a material of the first layer,
wherein a material of the core has a band gap energy which is greater than the band gap energy of the material of the first layer,
wherein the semiconductor nanocrystal does not comprise cadmium, and
wherein the semiconductor nanocrystal has a full width at half maximum of an emitted light wavelength of less than or equal to about 60 nanometers.
2. The semiconductor nanocrystal of claim 1 , wherein the core has a full width at half maximum of about 10 nanometers to about 30 nanometers.
3. The semiconductor nanocrystal of claim 1 , wherein the core has luminous efficiency of about 20 percent or more.
4. The semiconductor nanocrystal of claim 3 , wherein the core has only band edge emission.
5. The semiconductor nanocrystal of claim 1 , wherein the core has a diameter of about 2 nanometers to about 3.5 nanometers.
6. The semiconductor nanocrystal of claim 1 , wherein the core emits light having a wavelength of about 410 nanometers to about 1200 nanometers.
7. The semiconductor nanocrystal of claim 1 , wherein the core has no substantial trap emission.
8. The semiconductor nanocrystal of claim 1 , wherein the second layer comprises ZnTe, ZnSe, ZnS, ZnO, AlN, AlP, AlAs, AlSb, GaN, Gap, GaAs, GaSb, InN, InP, InAs, InSb, or a combination thereof.
9. The semiconductor nanocrystal of claim 1 , further comprising a second layer on the first layer, the second layer comprising a Group II-VI semiconductor or a Group III-V semiconductor.
10. The semiconductor nanocrystal of claim 9 , wherein a material of the second layer has a larger band gap energy than a material of the first layer.
11. The semiconductor nanocrystal of claim 9 , wherein the second layer comprises ZnTe, ZnSe, ZnS, ZnO, AlN, AlP, AlAs, AlSb, GaN, Gap, GaAs, GaSb, InN, InP, InAs, InSb, or a combination comprising at least one of the foregoing.
12. The semiconductor nanocrystal of claim 9 , wherein the core has a full width at half maximum of about 10 nanometers to about 30 nanometers.
13. The semiconductor nanocrystal of claim 9 , wherein the core has luminous efficiency of about 20 percent or more.
14. The semiconductor nanocrystal of claim 13 , wherein an emission of the core is only band edge emission.
15. A semiconductor nanocrystal composite comprising:
the semiconductor nanocrystal according to claim 1 ; and
a matrix.
16. The semiconductor nanocrystal composite of claim 15 , wherein the matrix comprises poly(vinyl alcohol), poly(vinyl carbazol), poly(vinyl fluoride), polymethyl vinyl ether, polyethylene, polypropylene, polystyrene, poly(vinyl pyridine), poly(ethylene oxide), polyalkylacrylate, poly(silane), polycarbonate, polysiloxane, acrylate, silicon, epoxy, titania, silica, alumina, zirconia, indium tin oxide, or a combination comprising at least one of the foregoing.
17. A luminescence device comprising the semiconductor nanocrystal composite according to claim 1 .
18. The luminescence device of claim 17 , wherein the luminescence device comprises two electrodes and the semiconductor nanocrystal between the two electrodes.
19. The luminescence device of claim 17 , wherein the luminescence device comprises a light source and the semiconductor nanocrystal is disposed on the light source.
20. The semiconductor nanocrystal of claim 1 , wherein neither the core nor the first layer has a trap in a band structure thereof.
21. The semiconductor nanocrystal of claim 1 , wherein the first layer consists of a Group III-V semiconductor.
22. The semiconductor nanocrystal of claim 1 , wherein the core consists of ZnSe and the first layer consists of InP.