Semiconductor structure with beryllium oxide
A semiconductor structure with beryllium oxide is provided. The semiconductor structure comprises: a semiconductor substrate ( 100 ); and a plurality of insulation oxide layers ( 201, 202 . . . 20 x ) and a plurality of single crystal semiconductor layers ( 301, 302 . . . 30 x ) alternately stacked on the semiconductor substrate ( 100 ). A material of the insulation oxide layer ( 201 ) contacted with the semiconductor substrate ( 100 ) is any one of beryllium oxide, SiO 2 , SiO x N y and a combination thereof, a material of other insulation oxide layers ( 202 . . . 20 x ) is single crystal beryllium oxide.
1. A semiconductor structure with beryllium oxide, comprising:
a semiconductor substrate; and
a plurality of insulation oxide layers and a plurality of single crystal semiconductor layers alternately stacked on the semiconductor substrate,
wherein
a material of the insulation oxide layer contacted with the semiconductor substrate is any one of SiO 2 , SiO x N y and a combination thereof, a material of other insulation oxide layers is single crystal beryllium oxide, and a thickness of each of the other insulation oxide layers is not less than 25 nm;
at least one single crystal semiconductor layer is strained; and
at least one single crystal semiconductor layer is different from other single crystal semiconductor layers in type of strain.
2. The semiconductor structure according to claim 1 , wherein a material of the semiconductor substrate comprises any one of single crystal Si, single crystal SiGe and single crystal Ge.
3. The semiconductor structure according to claim 1 , wherein a material of each single crystal semiconductor layer comprises any one of Si, Ge, SiGe, groups III-V compound semiconductor materials, and groups II-VI compound semiconductor materials and a combination thereof.
4. The semiconductor structure according to claim 1 , wherein each single crystal semiconductor layer comprises one or more sub-layers.
5. The semiconductor structure according to claim 1 , wherein at least one single crystal semiconductor layer is different from other single crystal semiconductor layers in material.
6. The semiconductor structure according to claim 1 , wherein at least one single crystal semiconductor layer is different from other single crystal semiconductor layers in degree of strain.
7. The semiconductor structure according to claim 1 , wherein a surface of the semiconductor substrate is any crystal plane of (100), (110) and (111).
8. The semiconductor structure according to claim 1 , wherein each of the other insulation oxide layers and each single crystal semiconductor layer are formed by epitaxial growth.