No flow underfill or wafer level underfill and solder columns
A preassembly semiconductor device comprises substrate soldering structures extending toward chip soldering structures for forming solder connections with the chip soldering structures, i.e., the chip and the substrate are in preassembly positions relative to one another. The height of the substrate soldering structures is greater than the height of the chip soldering structures. A pre-applied underfill is contiguous with the substrate and is sufficiently thick so as to extend substantially no further than the full height of the substrate soldering structures. In another embodiment the height of the chip soldering structures is greater than the height of the substrate soldering structures and the pre-applied underfill is contiguous with the semiconductor chip and sufficiently thick so as to extend substantially no further than the full height of the chip soldering structures. A process comprises manufacturing semiconductor assemblies from these devices by soldering the semiconductor chip and the substrate to one another.
1. A preassembly semiconductor device comprising;
a) a semiconductor chip comprising chip soldering structures C4 connectors;
b) a substrate comprising substrate soldering structures that correspond to and extend toward said chip soldering structures for forming solder connections with said chip soldering structures, the height of said substrate soldering structures being greater than the height of said chip soldering structures;
c) said chip and said substrate being in preassembly positions relative to one another;
d) a single pre-applied underfill covering said substrate soldering structures not substantially beyond their tops;
whereby the amount of said underfill is adjusted to obtain better yields of a semiconductor device assembled from thermal compression of said pre-assembly;
a) to decrease the amount of underfill pushed away from the tops of said substrate soldering structures during said assembly,
b) to be present in an amount to enable said substrate soldering structures to be substantially free of voids during said assembly,
c) whereby said thermal compression decreases any gap between the surfaces of said substrate and said chip and,
b) wherein the said thermal compression converts said substrate soldering structures and said chip soldering structures into a monolith, and
c) said underfill is also present in an amount to substantially encapsulate the entire said monolith.
2. The device of claim 1 wherein said chip soldering structures on a semiconductor chip are selected from solder bumps, BLM pads, metal pillars, or solder capped metal pillars.
3. The device of claim 1 wherein said substrate soldering structures on a substrate are selected from IMS columns, metal posts, and solder capped metal posts.
4. The device of claim 1 wherein said chip soldering structures comprise solder columns or metal pillar connectors.
5. The device of claim 4 wherein said solder column comprise electroplated solder connectors or C4NP solder connectors.
6. The device of claim 1 wherein said pre-applied underfill comprises a B-stage applied underfill.
7. A preassembly semiconductor device comprising;
a) a semiconductor chip comprising solder structures on said chip for soldering C4 connectors;
d) a substrate comprising substrate solder structures that correspond to and extend toward said solder structures on said chip to form solder connections with said solder structures on said chip;
e) said chip and said substrate being in preassembly positions relative to one another;
d) a single pre-applied underfill covering said substrate soldering structures not substantially beyond their tops;
where the amount of said underfill is adjusted to obtain better yields of a semiconductor device assembled from thermal compression of said pre-assembly;
a) to decrease the amount of underfill pushed away from the tops of said substrate soldering structures during said assembly,
b) to be present in an amount to enable said substrate soldering structures to be substantially free of voids during said assembly,
c) whereby said thermal compression decreases any gap between the surfaces of said substrate and said chip and,
f) wherein the said thermal compression converts said substrate soldering structures and said chip soldering structures into a monolith, and
g) said underfill is also present in an amount to substantially encapsulate the entire said monolith.
8. The device of claim 7 wherein said solder structures are selected from solder bumps.
9. The device of claim 7 wherein said solder structures are selected from solder columns.
10. The device of claim 7 wherein said solder structures are selected from electroplated solder connectors.
11. The device of claim 7 wherein said solder structures are selected from solder capped BLM pads.
12. The device of claim 7 wherein said solder structures are selected from solder capped metal pillars.
13. The device of claim 7 wherein said solder structures are selected from solder capped metal posts.
14. The device of claim 7 wherein said solder structures are selected from solder capped IMS columns.
15. The device of claim 7 wherein the height of said substrate solder structures is greater than the height of said solder structures on said chip.
16. The device of claim 7 wherein said pre-applied underfill partially or substantially covers at least one of said substrate solder structures on said substrate.