Solid-state microscope for selectively imaging a sample
Exemplary embodiments provide solid-state microscope (SSM) devices and methods for processing and using the SSM devices. The solid-state microscope devices can include a light emitter array having a plurality of light emitters with each light emitter individually addressable. During operation, each light emitter can be biased in one of three operating states including an emit state, a detect state, and an off state. The light emitter can include an LED (light emitting diode) including, but not limited to, a nanowire based LED or a planar LED to provide various desired image resolutions for the SSM devices. In an exemplary embodiment, for near-field microscopy, the resolution of the SSM microscope can be essentially defined by the pitch p, i.e., center-to-center spacing between two adjacent light emitters, of the light emitter array.
1. A solid-state microscope for imaging an object comprising:
a semiconductor substrate;
a first light emitter disposed on the semiconductor substrate, were the first light emitter is biased in an emit operating state at a first time period and biased in a detect state at a second time period, the second time period being subsequent to the first time period;
a second light emitter disposed on the substrate and adjacent to the first light emitter, wherein the second light emitter is biased in a detect operating state at the first time period and biased in the emit state during a second time period; and
a plurality of light emitters disposed on the semiconductor substrate, wherein the first light emitter, the second light emitter, and the plurality of light emitters are disposed in an array having a pitch p, wherein the first light emitter, the second lighter emitter, and each light emitter of the plurality of light emitters is operable to be biased in one of an emit operating state, a detect operating state, and an off operating state, and wherein each light emitter of the plurality of light emitters is in a lens-less arrangement with the object.
2. The solid-state microscope of claim 1 , further comprising a read out integrated circuit (ROIC) cell connected to each light emitter of the plurality of light emitters.
3. The solid-state microscope of claim 1 , wherein the pitch p of the array is about 1 micron or greater.
4. The solid-state microscope of claim 1 , wherein the substrate comprises one or more materials selected from the group consisting of Si, SiC, sapphire, GaN and GaAs.
5. The solid-state microscope of claim 1 , wherein the plurality of light emitters disposed in an array comprises:
one or more light emitters biased in the emit operating state to illuminate an object portion;
a first plurality of light emitters that surround the one light emitter and biased in the detect operating state to detect a reflected light from the illuminated object portion; and
a second plurality of light emitters biased in the off operating state.
6. The solid-state microscope of claim 1 , wherein each light emitter emits light at a wavelength to excite a specific mechanism in the object.
7. The solid-state microscope of claim 1 , wherein each light emitter comprises a multi-quantum-well (MQW) active region comprising one or more materials chosen from InGaN, AlGaN, or GaN.
8. The solid-state microscope of claim 1 , wherein the pitch p ranges from about 1 micron to about 3 microns for a nanowire based LED (light emitting diode) array.
9. The solid-state microscope of claim 8 , wherein the nanowire based LED array comprises a core-shell LED comprising a MQW shell and a nanowire core, wherein the nanowire core comprises one or more materials chosen from GaN, AlN, InN, InGaN, AlInGaN, AlGaN, InP, or GaAs.
10. The solid-state microscope of claim 9 , wherein the nanowire core is formed using a pulsed metal-organic chemical vapor deposition growth mode.
11. The solid-state microscope of claim 1 , wherein the pitch p is about 10 microns or greater for a planar LED array.
12. The solid-state microscope of claim 11 , wherein each planar LED of the planar LED array comprises an InGaN based multi-quantum-well active region disposed between an n-doped GaN layer and a p-doped AlGaN or GaN layer.
13. The solid-state microscope of claim 1 , further comprising a photocollector, wherein the object is disposed between the photocollector and the plurality of light emitters for a transmission mechanism.
14. The solid-state microscope of claim 1 , further comprising a second solid-state microscope placed above the object and allowing simultaneous viewing of the same object from two sides.