Semiconductor storage device and manufacturing method thereof
A memory includes a semiconductor substrate. Cell transistors are on the substrate. Contact plugs each of which is buried between the adjacent cell transistors and electrically connected to a diffusion layer between the adjacent cell transistors. An interlayer dielectric film buries gaps between the contact plugs. A storage element is provided not above the contact plugs but above the interlayer dielectric film. A sidewall film covers a part of a side surface of the storage element, and is provided to overlap with one of the contact plugs as viewed from above a surface of the semiconductor substrate. A lower electrode is provided between a bottom of the storage element and the interlayer dielectric film and between the sidewall film and one of the contact plugs, and electrically connects the storage element to one of the contact plugs.
1. A semiconductor storage device comprising:
a semiconductor substrate;
a plurality of cell transistors on the semiconductor substrate;
a plurality of contact plugs each buried between the adjacent cell transistors, and directly and electrically connected to a diffusion layer between the adjacent cell transistors;
an interlayer dielectric film burying gaps between the plurality of the contact plugs;
a storage element provided not above the contact plugs but above the interlayer dielectric film;
a sidewall film covering at least a part of a side surface of the storage element, and overlapping with one of the contact plugs as viewed from above a surface of the semiconductor substrate; and
a lower electrode between a bottom of the storage element and the interlayer dielectric film and between the sidewall film and one of the contact plugs, the lower electrode electrically connecting the storage element to one of the contact plugs,
wherein, as the storage element and the lower electrode are viewed from above the surface of the semiconductor substrate, an external edge of the storage element is substantially equal in a shape to an external edge of the lower electrode, and
centers of the storage element and the lower electrode substantially match one another.
2. The device of claim 1 , wherein, as the sidewall film and the lower electrode are viewed from above the surface of the semiconductor substrate, an external edge of the sidewall film is substantially equal in a shape to the external edge of the lower electrode.
3. The device of claim 2 , wherein, as the sidewall film and the lower electrode are viewed from above the surface of the semiconductor substrate, the sidewall film and the lower electrode are generally circular, and a center of the sidewall film substantially matches the center of the lower electrode.
4. The device of claim 1 , wherein, as the storage element and the lower electrode are viewed from above the surface of the semiconductor substrate, the storage element and the lower electrode are generally circular, and a center of the storage element substantially matches a center of the lower electrode.
5. The device of claim 1 , wherein
as the storage element and the contact plugs are viewed from above the surface of the semiconductor substrate, the storage element is away from one of the contact plugs by a gap without overlapping with the contact plug, and
the lower electrode is provided on the gap.
6. The device of claim 1 , wherein the sidewall film is a film made of at least one of silicon nitride, aluminum oxide, and zirconium oxide, or a composite film of silicon nitride, aluminum oxide, and zirconium oxide.
7. The device of claim 2 , wherein the sidewall film is a film made of at least one of silicon nitride, aluminum oxide, and zirconium oxide, or a composite film of silicon nitride, aluminum oxide, and zirconium oxide.
8. The device of claim 1 , further comprising an upper electrode on the storage element, wherein
the sidewall film is provided on a side surface of the upper electrode, a side surface of the storage element, and a part of an upper surface of the lower electrode.
9. The device of claim 2 , further comprising an upper electrode on the storage element, wherein
the sidewall film is provided on a side surface of the upper electrode, a side surface of the storage element, and a part of an upper surface of the lower electrode.
10. The device of claim 1 , wherein
the storage element comprises two magnetic layers and a tunnel barrier film provided between the two magnetic layers, and
the sidewall film is provided on an upper surface of the tunnel barrier film and on a side surface of one of the magnetic layers on the tunnel barrier film.
11. The device of claim 2 , wherein
the storage element comprises two magnetic layers and a tunnel barrier film provided between the two magnetic layers, and
the sidewall film is provided on an upper surface of the tunnel barrier film and on a side surface of one of the magnetic layers on the tunnel barrier film.
12. The device of claim 8 , wherein the upper electrode is a film made of at least one of Ta, titanium nitride, tungsten nitride, tantalum nitride, Pt, Ir, Ru, and Pd, or a composite film of Ta, titanium nitride, tungsten nitride, tantalum nitride, Pt, Ir, Ru, and Pd.