Method of manufacturing semiconductor device
The reliability of a semiconductor device is to be improved. A microcomputer chip (semiconductor chip) having a plurality of pads formed on a main surface thereof is mounted over an upper surface of a wiring substrate in an opposed state of the chip main surface to the substrate upper surface. Pads coupled to a plurality of terminals (bonding leads) formed over the substrate upper surface comprise a plurality of first pads in which a unique electric current different from the electric current flowing through other pads flows and a plurality of second pads in which an electric current common to the pads flows or does not flow. Another first pad of the first pads or one of the second pads are arranged next to the first pad. The first pads are electrically coupled to a plurality of bonding leads respectively via a plurality of bumps (first conductive members), while the second pads are bonded to the terminals via a plurality of bumps (second conductive members).
1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) providing a wiring substrate including a first surface, a plurality of bonding leads formed on the first surface, a plurality of solders respectively formed over the bonding leads, a second surface opposite to the first surface, and a plurality of lands formed on the second surface; and
(b) after the step (a), disposing a semiconductor chip over the first surface of the wiring substrate such that a main surface of the semiconductor chip faces the first surface of the wiring substrate, and electrically connecting a plurality of protruding electrodes of the semiconductor chip with the plurality of bonding leads by contacting the plurality of protruding electrodes with the solders and by melting the solders by heat, the semiconductor chip including the main surface, a plurality of pads formed over the main surface, the protruding electrodes respectively formed over the pads, and a back surface opposite to the main surface,
wherein the main surface of the semiconductor chip has a first area in which a core circuit is formed, and a second area surrounding the first area in plan view,
wherein the pads are formed in the second area, but not formed in the first area, in plan view,
wherein the plurality of pads includes a plurality of first pads and a first dummy pad,
wherein the plurality of first pads is arranged along sides of the main surface,
wherein the first dummy pad is arranged next to one of the plurality of first pads, and is located closer to the first area than said one of the plurality of first pads, and
wherein the semiconductor device is constructed such that each said first pad can be electrically coupled to an external device, and the first dummy pad is a pad which cannot be electrically coupled to an external device.
2. The method according to claim 1 , wherein in the step (b), the plurality of solders is melted by heating both the wiring substrate and the semiconductor chip.
3. The method according to claim 1 , wherein each of the protruding electrodes comprises gold.
4. The method according to claim 1 ,
wherein the plurality of first pads are arranged along a first direction substantially parallel to one of the sides of the main surface,
wherein the plurality of pads further includes a second dummy pad,
wherein the second dummy pad is arranged next to said one of the plurality of first pads in the first direction, and
wherein the semiconductor device is constructed such that the second dummy pad is a pad which cannot be electrically coupled to an external device.
5. The method according to claim 1 ,
wherein a unique electric current supplied from the external device flows in the plurality of first pads, said unique electric current being different from current flowing in others of said plurality of pads.