Acoustic wave device
An acoustic wave device includes: a comb-like electrode provided on a piezoelectric substrate; and a first medium that covers the comb-like electrode and has at least a silicon oxide film in which an element is doped, wherein sonic speed in the silicon oxide film in which the element is doped is lower than sonic speed in an undoped silicon oxide film.
1. An acoustic wave device comprising:
a comb-like electrode provided on a piezoelectric substrate; and
a first medium that covers the comb-like electrode and has at least a silicon oxide film in which an element is doped,
wherein sonic speed in the silicon oxide film in which the element is doped is lower than sonic speed in an undoped silicon oxide film.
2. The acoustic wave device as claimed in claim 1 , wherein the first medium includes an undoped silicon oxide film and the silicon oxide film in which the element is doped.
3. The acoustic wave device as claimed in claim 1 , wherein:
the first medium has an undoped silicon oxide film covering the comb-like electrode; and
the silicon oxide film in which the element is doped is provided on the undoped silicon oxide film.
4. The acoustic wave device as claimed in claim 1 , wherein:
the silicon oxide film in which the element is doped has a first silicon oxide film in which the element is doped and a second silicon oxide film in which the element is doped;
the first medium has an undoped silicon oxide film;
the first silicon oxide film covers the comb-like electrode;
the undoped silicon oxide film is provided on the first silicon oxide film; and
the second silicon oxide film is provided on the undoped silicon oxide film.
5. The acoustic wave device as claimed in claim 1 , wherein the first medium has the silicon oxide film, in which the element is doped, that covers the comb-like electrode and an undoped silicon oxide provided on the silicon oxide film in which the element is doped.
6. The acoustic wave device as claimed in claim 1 , wherein the first medium is structured with the silicon oxide film, in which the element is doped, that covers the comb-like electrode.
7. The acoustic wave device as claimed in claim 1 , wherein the silicon oxide film in which the element is doped is used as a frequency-regulating film.
8. The acoustic wave device as claimed in claim 1 , wherein a sign of a temperature coefficient of an elastic constant of the silicon oxide film in which the element is doped is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric substrate.
9. The acoustic wave device as claimed in claim 2 , wherein:
a sign of a temperature coefficient of an elastic constant of the silicon oxide film in which the element is doped is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric substrate; and
a peak wavenumber measured by a FTIR method of the silicon oxide film in which the element is doped is larger than a peak wavenumber measured by the FTIR method of the undoped silicon oxide film included in the first medium.
10. The acoustic wave device as claimed in claim 2 , wherein:
a sign of a temperature coefficient of an elastic constant of the silicon oxide film in which the element is doped is opposite to a sign of a temperature coefficient of an elastic constant of the piezoelectric substrate; and
a half-value width measured by a FTIR method of the silicon oxide film in which the element is doped is smaller than a half-value width measured by the FTIR method of the undoped silicon oxide film included in the first medium.
11. The acoustic wave device as claimed in claim 1 , wherein two or more different elements are doped in the silicon oxide film in which the element is doped.
12. The acoustic wave device as claimed in claim 1 , wherein fluorine is doped in the silicon oxide film in which the element is doped.
13. The acoustic wave device as claimed in claim 1 further comprising a second medium provided on the first medium,
wherein sonic speed in the second medium is higher than sonic speed in the first medium.