Analog sensing of memory cells in a solid-state memory device
A memory device that includes a sample and hold circuit coupled to a bit line. The sample and hold circuit stores a target threshold voltage for a selected memory cell. The memory cell is programmed and then verified with a ramped read voltage. The read voltage that turns on the memory cell is stored in the sample and hold circuit. The target threshold voltage is compared with the read voltage by a comparator circuit. When the read voltage is at least substantially equal to (i.e., is substantially equal to and/or starts to exceed) the target threshold voltage, the comparator circuit generates an inhibit signal.
1. A memory device comprising:
an array of memory cells organized in word lines and bit lines, each cell programmable to a target threshold voltage;
a sample and hold circuit for storing a representation of the target threshold voltage;
a current sensing circuit coupled between the sample and hold circuit and a bit line for detecting a bit line current in response to a read voltage on a word line; and
a comparator circuit for generating an inhibit signal in response to a comparison between the representation of the target threshold voltage and a representation of the read voltage on the word line.
2. The memory device of claim 1 and further including a word line voltage generator that generates a ramped voltage on which the read voltage is located.
3. The memory device of claim 1 wherein the memory device is a NAND flash memory device.
4. The memory device of claim 2 wherein the word line voltage generator is further adapted to generate programming voltages for biasing the word lines of the memory array.
5. The memory device of claim 1 wherein the sample and hold circuit is comprised of a first capacitor for storing the representation of the target threshold voltage.
6. The memory device of claim 5 wherein the sample and hold circuit is further comprised of a second capacitor for storing the representation of the read voltage prior to being coupled to the comparator circuit.
7. The memory device of claim 6 wherein the first and second capacitors are switchably coupled to a word line voltage generator such that the representation of the target threshold voltage is coupled to the first capacitor when a first switch is closed and a ramped read voltage is coupled to the second capacitor when a second switch is closed.
8. The memory device of claim 1 wherein the sample and hold circuit and the comparator circuit are comprised of:
a first capacitor for storing the representation of the read voltage;
a first operational amplifier-driver, coupled to the first capacitor, for outputting data representative of the read voltage;
a second capacitor for storing the representation of the target threshold voltage; and
a second operational amplifier-driver, switchably coupled to the first operational amplifier-driver, for generating an inhibit signal in response to the comparison of the representation of the read voltage and representation of the target threshold voltage.
9. The memory device of claim 8 wherein the first comparator is switchably coupled to an input/output line.
10. The memory device of claim 1 wherein the current sensing circuit generates a control signal that loads the representation of the read voltage into the sample and hold circuit in response to detecting the bit line current.
11. The memory device of claim 1 wherein the sample and hold circuit and the comparator circuit are comprised of:
a first capacitor for storing the representation of the read voltage;
a second capacitor for storing the representation of the target threshold voltage; and
an operational amplifier-driver having a first input, a second input and an output, wherein the first input is switchably coupled to the second capacitor, wherein the second input is coupled to the first capacitor, wherein the output is switchably coupled to the first input, wherein a node coupled to the output provides data representative of the read voltage at a first time, and wherein the node provides an inhibit signal at a second time in response to a comparison of the representation of the read voltage and the representation of the target threshold voltage.
12. A memory device comprising:
an array of memory cells;
a sample and hold circuit that stores a representation of a target threshold voltage of at least one of the memory cells; and
a current sensing circuit coupled between the sample and hold circuit and a sense line that detects a sense line current in response to a voltage on a word line;
wherein an inhibit signal is generated in response to a comparison between the representation of the target threshold voltage and a representation of the voltage on the word line.
13. The memory device of claim 12 wherein the representation of the target threshold voltage is the target threshold voltage.
14. The memory device of claim 12 wherein the inhibit signal is generated in response to the representation of the voltage on the word line being at least substantially equal to the representation of the target threshold voltage.
15. The memory device of claim 12 and further including a comparator that generates the inhibit signal.
16. The memory device of claim 12 wherein the voltage on the word line is a read voltage.
17. The memory device of claim 12 wherein the voltage on the word line is a verify voltage.
18. The memory device of claim 12 wherein the voltage on the word line is a program voltage.
19. The memory device of claim 12 wherein the sample and hold circuit stores a representation of a threshold voltage of a selected memory cell.
20. The memory device of claim 12 wherein the voltage on the word line is a ramped voltage and the sample and hold circuit is configured to store a level of the ramped voltage in response to a signal from the current sensing circuit.