Photolithography method using a chemically-amplified resist
A photolithography method, including the steps of: S 1 ) depositing, on the upper surface of a wafer, a chemically-amplified resist; S 2 ) exposing the resist to a sensitizing radiation through a mask, to generate acid compounds in the exposed regions; S 3 ) heating the resist, to have the acid compounds react with dissolution-inhibiting groups; and S 5 ) developing the resist; and including, after step S 3 , a step of neutralization, S 4 , of the acid compounds which have not reacted at step S 3.
1. A photolithography method, comprising:
depositing, on an upper surface of a wafer, a chemically-amplified resist;
exposing the resist to a sensitizing radiation through a mask, the exposing including generating acid compounds in exposed regions of the resist;
causing a first portion of the acid compounds to react with dissolution-inhibiting groups, the causing including heating the resist;
neutralizing a second portion of the acid compounds which have not reacted while heating the resist; and
developing the resist, wherein the neutralizing is implemented within a short delay after heating as compared with a duration between an end of heating the resist and a beginning of developing the resist and the neutralizing is started within a period of no more than 15 minutes after ending the heating.
2. The method of claim 1 , wherein the neutralizing is started within a period less than 3 minutes after ending the heating and lasts for from 10 seconds to 5 minutes.
3. The method of claim 1 , wherein the neutralizing comprises placing the resist-coated wafer in an environment that includes vapors of an alkaline compound.
4. The method of claim 3 , wherein the alkaline compound belongs to the group consisting of amines and compounds of silazane and silazane derivatives.
5. The method of claim 1 , wherein the neutralizing includes taking the resist to a temperature less than a maximum temperature reached by the resist during the heating.
6. The method of claim 4 , wherein the maximum temperature reached by the resist during the heating ranges between 80 and 90° C. and the neutralizing is carried out at ambient temperature.
7. The method of claim 1 , wherein the depositing, exposing, causing, and developing are carried out under a protected atmosphere.
8. The method of claim 1 , further comprising, before depositing the resist, depositing a coupling agent on the upper surface of the wafer.
9. The method of claim 8 , wherein the coupling agent is hexamethyldisilazane.
10. The method of claim 1 , wherein the neutralizing includes placing the resist-coated wafer in an environment that includes vapors of an alkaline compound within the period of no more than 15 minutes after ending the heating.
11. The method of claim 1 , wherein the neutralizing is started within a period of no more than 3 minutes after ending the heating.
12. The method of claim 11 , wherein the neutralizing includes placing the resist-coated wafer in an environment that includes vapors of an alkaline compound within the period of no more than 3 minutes after ending the heating.