Twin-drain spatial wavefunction switched field-effect transistors

1. A Spatial Wavefunction Switching CMOS (SWS-CMOS) like logic inverter, comprising:

a first field-effect transistor device having a first source region, a first gate region, and a first drain region, and

a second field-effect transistor device having a second source region, a second gate region, and a second drain region, wherein the first field-effect transistor and the second field-effect transistor are n-channel devices each having n-channel structures and are configured to form the inverter,

wherein each of the n-channel structures include an upper quantum well W 1 and at least one lower quantum well W 2 ,

wherein the upper quantum well W 1 is sandwiched between a gate insulator and a first barrier layer, wherein the thickness of the gate insulator of the first field-effect transistor differs from the thickness of the gate insulator of the second field-effect transistor and are sized responsive to a threshold used to form an inversion channel, and

wherein the lower quantum well W 2 is sandwiched between the first barrier layer of the upper quantum well and a second barrier layer on its bottom side, wherein the second barrier layer is interfaced with a p-semiconductor region, and

wherein each of the two upper and lower quantum wells are electrically connected with the source and drain regions, wherein the source and drain regions are n-type and electrically form a connection with the carriers introduced in the quantum wells to form the inversion channels, and

wherein the first field-effect transistor has the lower quantum well W 2 on a source side and is connected to a drain end of the upper quantum well W 1 of the second field-effect transistor, and the drain end of the first field-effect transistor is connected to a voltage supply, wherein a source end of the second field-effect transistor is connected to at least one of a ground or a second voltage supply, the gates of the first and second field-effect transistors being electrically connected to each other, and

wherein the gates of the first and second field-effect transistors are also connected to an input voltage, and

wherein a source end of the lower quantum well W 2 of the first transistor which is connected to the drain end of the upper quantum well W 1 of the second transistor T 2 is also connected to the output, the output end is connected to other logic stages.

2. A Spatial Wavefunction Switching Field Effect Transistor (SWS-FET) inverter, comprising:

a first field-effect transistor having a first source region, a first gate region and a first drain region, and

a second field-effect transistor having a second source region, a second gate region and a second drain region, wherein the first field-effect transistor and the second field-effect transistor are n-channel devices and wherein each of the first field-effect transistor and the second field-effect transistor having an n-channel structure,

wherein the n-channel structure in the first field-effect transistor and the second field-effect transistor comprise of at least two channels,

wherein each of n-channel structure include an upper channel and at least one lower channel,

wherein the upper channel is selected from cladded quantum dots and the lower channel is a quantum well,

wherein the upper channel comprising of plurality of cladded quantum dots,

and wherein the cladding layer is 1-2 nm in thickness around their core with 2-6 nm diameter, the said cladding layer is selected from SiOx, GeOx, and the said quantum dots are selected from Si, Ge and other semiconductors,

wherein the plurality of quantum dot serves as a transport channel.

3. The Spatial Wavefunction Switching Field Effect Transistor (SWS-FET) inverter, of claim 2 , wherein

the first field-effect transistor and the second field-effect transistor are the n-channel devices having the n-channel structures, wherein each of the n-channel structures include an upper channel and at least one lower channel,

wherein the upper quantum well W 1 is located between a gate insulator and a first barrier layer, wherein the gate insulator includes a gate insulator thickness,

wherein the gate insulator thickness of the gate insulator of the first field-effect transistor differs from the gate insulator thickness of the gate insulator of the second field-effect transistor, wherein the gate insulator are configured responsive to a threshold used to form an inverter channel, and

wherein the lower channel is sandwiched between the first barrier layer of the upper channel and a second barrier layer, wherein the second barrier layer is interfaced with a p-semiconductor region, and

wherein in the first field-effect transistor the upper channel has an upper source and an upper drain, and lower channel has a lower source and lower drain,

wherein in the second field-effect transistor the upper channel has an upper source and an upper drain, and lower channel has an lower source and lower drain,

wherein each of the upper channel and lower channel are electrically connected with their respective source and drain regions, wherein the source and drain regions are n-type regions and form a connection with electrons introduced in the upper and lower channels to form an inversion channel,

wherein in the first field-effect transistor the first upper drain and the lower drain region are connected together, and in the second field effect transistor the upper source and the lower source are connected together, and

wherein the first field-effect transistor has the lower source and is connected to the upper of the second field-effect transistor, and the upper and the lower drains of the first field-effect transistor is connected to a voltage supply, wherein the upper and lower sources of the second field-effect transistor is connected to at least one of a ground or a second voltage supply, the gates of the first and second field-effect transistors being electrically connected to each other, and

wherein the gates of the first and second field-effect transistors are also connected to an input voltage, and

wherein the lower source of the lower channel of the first transistor which is connected to the upper drain of the upper channel of the second transistor is also connected to the output, the output end is connected to other logic stages.

4. The Spatial Wavefunction Switching Field Effect Transistor (SWS-FET) inverter, of claim 3 , further including one SWS-FET configured as at least one of a NAND and a NOR logic.

5. The Spatial Wavefunction Switching Field Effect Transistor (SWS-FET) inverter, of claim 2 , wherein

wherein the first field-effect transistor and the second field-effect transistor are the re-channel devices each having the n-channel structures, wherein each of the n-channel structures include an upper quantum dot channel QD 1 and at least one lower quantum dot channel QD 2 ,

said quantum dot channels comprising of at least one layer of cladded quantum dots with a thin (1-2 nm) cladding layer around their core with 2-6 nm diameter, the said cladding layer is selected from SiOx, GeOx, and the said quantum dots are selected from Si, Ge and other semiconductors,

where the quantum dot channels functions like transport channels,

wherein the upper quantum dot channel QD 1 is sandwiched between a gate insulator, wherein the thickness of the gate insulator of the first field-effect transistor differs from the thickness of the gate insulator of the second field-effect transistor and are sized responsive to a threshold used to form an inverter channel, and

wherein the lower quantum dot channel QD 2 is sandwiched between the said cladding layer of the upper quantum dot layer and a thin second barrier layer on its bottom side, wherein the second barrier layer is interfaced with a p-semiconductor region, and

wherein each of the two upper and lower quantum dot channels are electrically connected with their respective source and drain regions, wherein the source and drain regions are n-type and electrically form a connection with the carrier introduced in the quantum dot channels to form the inversion channels, wherein in the first field-effect transistor the drain ends of the upper and lower quantum dot channels are connected together, and in the second field effect transistor the source ends of the upper and lower quantum dot channels are connected together, and

wherein the first field-effect transistor has the lower quantum dot channel QD 2 on a source side and is connected to a drain end of the upper quantum dot channel QD 1 of the second field-effect transistor, and the drain end of the first field-effect transistor is connected to a voltage supply, wherein the source end of the second field-effect transistor is connected to at least one of a ground or a second voltage supply, the gates of the first and second field-effect transistors being electrically connected to each other, and

wherein the gate regions of the first and second field-effect transistors are also connected to an input voltage, and

wherein the source region ends of the lower quantum dot channel QD 2 of the first field-effect transistor which is connected to the drain end of the upper quantum dot channel QD 1 of the second field-effect transistor is connected to the output, wherein the output is connected to other logic stages.

6. The Spatial Wavefunction Switching Field Effect Transistor (SWS-FET) inverter, of claim 5 , further including one SWS-FET configured as at least one of a NAND and a NOR logic.

7. The Spatial Wavefunction Switching Field Effect Transistor (SWS-FET) inverter, of claim 2 , further including a conventional CMOS inverter configured as at least one of a NAND logic and a NOR logic.

8. The Spatial Wavefunction Switching Field Effect Transistor (SWS-FET) inverter, of claim 2 , further including one SWS-FET configured as at least one of a NAND and a NOR logic.