Field effect transistor using oxide semiconductor and method for manufacturing the same
A field effect transistor which includes, on a substrate, at least a semiconductor layer, a passivation layer for the semiconductor layer, a source electrode, a drain electrode, a gate insulating film and a gate electrode, the source electrode and the drain electrode being connected through the semiconductor layer, the gate insulating film being present between the gate electrode and the semiconductor layer, the passivation layer being at least on one surface side of the semiconductor layer, and the semiconductor layer including a composite oxide which comprises In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 (1) In/(In+Ga)=0.59 to 0.99 (2) Zn/(Ga+Zn)=0.29 to 0.99 (3).
1. A composite oxide comprising In (indium), Zn (zinc) and Ga (gallium) in the following atomic ratios (1) to (3):
In/(In+Zn)=0.2 to 0.8 (1)
In/(In+Ga)=0.59 to 0.99 (2)
In/(Ga+Zn)=0.29 to 0.99 (3),
forming a sintered target from an oxide semiconductor.
2. The composite oxide according to claim 1 , having the following atomic ratio (4):
Ga/(In+Zn+Ga)=0.1 to 0.2 (4).
3. The composite oxide according to claim 1 , having the following atomic ratio:
Ga/(In+Zn+Ga)=−/01 to 0.05/.
4. The composite oxide according to claim 1 , having the following atomic ratio:
Ga/(In+Zn+Ga)=0.05 to 0.2.
5. The composite oxide according to claim 1 , having the following atomic ratio (5) or the following atomic ratio (6):
In/(In+Zn+Ga)=0.3 to 0.5 5:
In/(In+Zn+Ga)=0.5 to 0.7, 0.5 not included. 6:
6. The composite oxide according to claim 1 , further comprising one or more lements of Sn (tin), Ge (germanium), Si (silicon), Ti (titanium), Zr (zirconium) or Hf (hafnium) in an amount of 100 to 10,000 atomic ppm.
7. The composite oxide according to claim 1 , wherein the bulk resistance of the target is less than 20 mΩcm.