Solid-state imaging device and image capturing system
A solid-state imaging device includes a photoelectric converting portion including a first semiconductor region capable of accumulating a signal charge, a second semiconductor region of the same conductivity type as the first semiconductor region, a gate electrode provided between the first and second semiconductor regions, and an insulating layer provided on the first semiconductor region, the second semiconductor region, and the gate electrode. The solid-state imaging device further includes a first light-shielding portion including a metal portion provided in an opening or a trench of the insulating layer between the first and second semiconductor regions, and a second light-shielding portion including a metal portion provided on the insulating layer on the second semiconductor region.
1. A solid-state imaging device comprising:
a photoelectric converting portion including a first semiconductor region capable of accumulating a signal charge;
a second semiconductor region of same conductivity type as the first semiconductor region;
a gate electrode provided between the first and second semiconductor regions;
an insulating layer provided on the first semiconductor region, the second semiconductor region, and the gate electrode;
a first light-shielding portion including a metal portion provided in an opening or a trench of the insulating layer between the first and second semiconductor regions; and
a second light-shielding portion including a metal portion that is provided on the insulating layer on the second semiconductor region and has a lower surface in contact with the upper surface of the insulating layer.
2. The solid-state imaging device according to claim 1 , further comprising:
a third semiconductor region; and another gate electrode different from the gate electrode provided between the second and third semiconductor regions.
3. The solid-state imaging device according to claim 2 , wherein
the first light-shielding portion includes a metal portion provided in an opening or a trench of the insulating layer between the second and third semiconductor regions.
4. The solid-state imaging device according to claim 2 , wherein
the first light-shielding portion includes a metal portion provided in an opening or a trench of the insulating layer so as to surround the second semiconductor region, and
the orthogonal projection of the first light-shielding portion onto a plane containing the light receiving surface of the photoelectric converting portion surrounds the second semiconductor region, the orthogonal projection being frame-shaped.
5. The solid-state imaging device according to claim 2 , further comprising
a plug that is provided in the opening of the insulating layer and is connected to the third semiconductor region,
the upper surface of the first light-shielding portion and the upper surface of the plug being formed substantially on the same plane.
6. The solid-state imaging device according to claim 5 , further comprising:
another insulating layer provided on the insulating layer; and
another plug that is provided in an opening of the another insulating layer and is connected to the plug.
7. The solid-state imaging device according to claim 1 , wherein
the first light-shielding portion also extends over the photoelectric converting portion.
8. The solid-state imaging device according to claim 1 , wherein
the opening of the insulating layer is provided with a plug connected to the gate electrode, and
the first light-shielding portion includes a metal portion provided in an opening or a trench of the insulating layer between the plug and the second semiconductor region.
9. The solid-state imaging device according to claim 1 , wherein
the insulating layer is made of silicon oxide.
10. The solid-state imaging device according to claim 1 , wherein
the first light-shielding portion is made of tungsten, and
the second light-shielding portion is made of aluminum.
11. The solid-state imaging device according to claim 1 , wherein
the second light-shielding portion is electrically floating.
12. An image capturing system comprising:
the solid-state imaging device according to claim 1 ; and
a processing unit configured to process a signal from the solid-state imaging device.
13. A solid-state imaging device comprising:
a photoelectric converting portion for focus detection;
a floating diffusion portion to which electric carriers are transferred from the photoelectric converting portion;
a gate electrode provided between the photoelectric converting portion and the floating diffusion portion;
an insulating layer provided on the photoelectric converting portion, the floating diffusion portion, and the gate electrode;
a first light-shielding portion including a metal portion provided in a trench or an opening of the insulating layer on the photoelectric converting portion; and
a second light-shielding portion that is provided on the insulating layer, has a lower surface in contact with the upper surface of the insulating layer, includes a metal portion provided on the photoelectric converting portion, and forms an opening for the focus detection.
14. An image capturing system comprising:
the solid-state imaging device according to claim 13 ; and
a processing unit configured to process a signal from the solid-state imaging device.