Semiconductor device and method of manufacturing the same
A semiconductor device includes a first interconnect, a porous dielectric layer formed over the first interconnect, a second interconnect buried in the porous dielectric layer and electrically connected to the first interconnect, and a carbon-containing metal film that is disposed between the porous dielectric layer and the second interconnect and isolates these layers.
1. A semiconductor device comprising:
a first interconnect;
a porous dielectric layer formed over said first interconnect;
a second interconnect buried in said porous dielectric layer and electrically connected to said first interconnect; and
a carbon-containing metal film that is disposed between said porous dielectric layer and said second interconnect and isolates these layers,
wherein said carbon-containing metal film is on a surface of said porous dielectric layer,
wherein a carbon concentration of a near-surface region of said carbon-containing metal film adjacent said porous dielectric layer is higher than a carbon concentration of a near-surface region of said carbon-containing film adjacent said second interconnect, and
wherein said porous dielectric layer does not comprise carbon.
2. The semiconductor device as claimed in claim 1 , wherein said carbon-containing metal film is not formed between said first interconnect and said second interconnect.
3. The semiconductor device as claimed in claim 1 , wherein a barrier metal film is provided between said carbon-containing metal film and said second interconnect.
4. The semiconductor device as claimed in claim 1 , wherein said carbon-containing metal film is TiC, TaC, WC or AlC 3 .
5. The semiconductor device as claimed in claim 1 , wherein said porous dielectric layer comprises SiO 2 .
6. The semiconductor device as claimed in claim 1 , wherein the film thickness of said carbon-containing metal film is 3 nm or more and 50 nm or less.
7. A method of manufacturing a semiconductor device comprising:
forming a porous dielectric layer over a first interconnect;
forming an interconnect trench in said porous dielectric layer;
impregnating said porous dielectric layer with a reactive carbon-containing compound;
depositing a metal film on the surface of said porous dielectric layer located at the side surface of said interconnect trench and on the surface of said first interconnect exposed at the bottom surface of said interconnect trench, and forming a carbon-containing metal film on the surface of said porous dielectric layer by introducing the carbon contained in said reactive carbon-containing compound into said metal film; and
forming a second interconnect in said interconnect trench where said carbon-containing metal film is formed,
wherein said impregnating with a reactive carbon-containing compound includes immersing said porous dielectric layer in which said interconnect trench is formed into a solution containing said reactive carbon-containing compound, followed by heating and drying.
8. The method of manufacturing a semiconductor device as claimed in claim 7 , wherein said impregnating with a reactive carbon-containing compound includes impregnating said porous dielectric layer with a reactive carbon-containing compound in an atmosphere containing said reactive carbon-containing compound that has been vaporized.
9. The method of manufacturing a semiconductor device as claimed in claim 7 , wherein
said reactive carbon-containing compound is thermally reactive, and
said forming said carbon-containing metal film includes depositing a metal film by sputtering on the surface of said porous dielectric layer and on the surface of said first interconnect exposed at the bottom surface of said interconnect trench, and introducing the carbon contained in said reactive carbon-containing compound into the metal film by heat provided in this sputtering.
10. The method of manufacturing a semiconductor device as claimed in claim 7 , which includes forming a barrier metal film over said carbon-containing metal film after said forming said carbon-containing metal film.
11. The method of manufacturing a semiconductor device as claimed in claim 7 , wherein said reactive carbon-containing compound is selected from cyclic siloxane and secondary alcohol.
12. The method of manufacturing a semiconductor device as claimed in claim 7 , wherein said carbon-containing metal film contains TiC, TaC, WC, or AlC 3 .
13. The method of manufacturing a semiconductor device as claimed in claim 7 , wherein the film thickness of said carbon-containing metal film is 3 nm or more and 50 nm or less.