Growth process for gallium nitride porous nanorods
A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN x on the GaN film, etching a growth opening through the SiN x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN x layer can be removed after the growing step. A SiO x template can be formed on the GaN film and the GaN can be grown to cover the SiO x template before depositing SiN x on the GaN film. The SiO x template can be removed after growing the nanorods.
1. A method for growing a nanorod, the method comprising: providing SiO x for patterning strips and pads; providing a substrate having a GaN thin film; patterning SiO x strips on the GaN film to form a SiO x template; patterning a SiO x pad coupled to the SiO x template; growing GaN through the SiO x template until the height of GaN is slightly higher than that of the SiO x strips; growing the GaN laterally to cover the SiO x template but not cover the SiO x pad; depositing a SiN x layer on top of the GaN; etching a growth opening through the SiN x layer and the GaN into the underlying SiO x strips; and growing a GaN nanorod through the growth opening, the GaN nanorod having a nanopore running substantially through the centerline of the nanorod to the growth opening.
2. The method of claim 1 , further comprising removing the SiN x layer, the SiO x template and the SiO x pad after the growing step.
3. The method of claim 1 , wherein etching is done using focused ion beam etching, and the growing of the GaN nanorod is done using organometallic vapor phase epitaxy.