Method for creating a selective solder seal interface for an integrated circuit cooling system

1. A method for forming cooling channels in an interface for soldering to a semiconductor structure, comprising:

forming a seed layer on a surface of a substrate;

patterning the seed layer into a patterned, plating seed layer covering portions of the substrate and exposing other portions of the substrate;

using the patterned plating seed layer to form channels through the exposed portions of the substrate; and

plating the patterned plating seed layer with solder.

2. The method recited in claim 1 including soldering the solder of the plating seed layer the interface to the semiconductor structure.

3. The method recited in claim 1 including affixing the interface to a fluid cooling heat exchanger.

4. The method recited in claim 3 wherein the heat exchanger has channels therein and wherein the heat exchanger channels are aligned with the interface channel.

5. The method recited in claim 4 wherein the heat exchanger is affixed to one surface of the interface and the semiconductor structure is soldered to an opposite surface of the interface.

6. The method recited in claim 5 wherein the heat exchanger is soldered to the interface.

7. The method recited in claim 5 wherein the heat exchanger is ionically bonded to the interface.

8. A method for forming cooling channels in an interface for soldering to a semiconductor structure, comprising:

forming a seed layer on a surface of a substrate;

lithographically forming a patterned layer of a first material having windows therein exposing selected regions of the seed layer;

forming an etchant mask on portions of a surface of the seed layer in the windows of the first material;

removing the first material leaving the etchant mask on the portions of the surface of the seed layer;

using the etchant mask, applying an etchant to the etchant mask to:

etch exposed portions of the seed layer forming a plating mask, and

etch upper portions of underlying portions of the substrate while leaving lower portions of the underlying portions of the substrate;

using the etchant mask, removing portions of the surface of the substrate between the lower portions of the substrate and adjacent portions of the substrate underlying the etchant mask forming slots through the substrate between the lower portions of the substrate and the adjacent portions of the substrate underlying the etchant mask;

removing the etchant mask and leaving unetched portions of the seed layer as a patterned, plating seed layer disposed on the substrate;

plating solder on the patterned, plating seed layer.

9. The method recited in claim 8 including soldering the solder on the interface to the semiconductor structure.

10. The method recited in claim 8 including affixing the interface to a fluid cooling heat exchanger.

11. The method recited in claim 10 wherein the heat exchanger has channels therein and wherein the heat exchanger channels are aligned with the interface channel.

12. The method recited in claim 11 wherein the heat exchanger is affixed to one surface of the interface and the semiconductor structure is soldered to an opposite surface of the interface.

13. The method recited in claim 12 wherein the heat exchanger is soldered to the interface.

14. The method recited in claim 12 wherein the heat exchanger is ionically bonded to the interface.