Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices
Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers.
1. A method of processing a substrate comprising:
depositing a silicon oxide layer on a substrate having a germanium or III-V semiconductor surface;
depositing a tantalum oxide layer on the silicon oxide layer; and
diffusing the tantalum oxide layer into the silicon oxide layer to provide a tantalum silicate layer having a Si/(Ta+Si) ratio in the range from about 0.01 to about 0.15.
2. The method of claim 1 , wherein diffusing the tantalum oxide layer comprises annealing the substrate.
3. The method of claim 1 , wherein the tantalum oxide layer is tantalum-rich.
4. The method of claim 3 , wherein the tantalum oxide layer has a Ta:O ratio of about 2:3.
5. The method of claim 1 , wherein the tantalum oxide layer is stoichiometric.
6. The method of claim 1 , wherein the Si/(Ta+Si) ratio is in the range from about 0.03 to about 0.10.
7. The method of claim 1 , wherein the tantalum silicate layer has a thickness less than about 2.5 nm.
8. The method of claim 1 , wherein one or more of the silicon oxide layer and the tantalum oxide layer is deposited via atomic layer deposition.
9. The method of claim 1 , further comprising atomic hydrogen cleaning the substrate surface prior to depositing the silicon oxide layer.
10. The method of claim 9 , wherein the substrate is not exposed to air between atomic hydrogen cleaning and depositing the silicon oxide layer and the substrate is not exposed to ambient air between depositing the silicon oxide layer and depositing the tantalum oxide layer.
11. A method of processing a substrate comprising:
depositing a silicon oxide layer on a substrate having a germanium or III-V semiconductor surface via an atomic layer deposition process;
depositing a tantalum oxide layer on the silicon oxide layer via an atomic layer deposition process; and
annealing the substrate to provide a tantalum silicate layer having a Si/(Ta+Si) ratio in the range from about 0.01 to about 0.15.
12. The method of claim 11 , wherein the tantalum oxide layer is tantalum-rich.
13. The method of claim 12 , wherein the tantalum oxide layer has a Ta:O ratio of about 2:3.
14. The method of claim 11 , wherein the tantalum oxide layer is stoichiometric.
15. The method of claim 11 , wherein the Si/(Ta+Si) ratio is in the range from about 0.03 to about 0.10.
16. The method of claim 11 , wherein the substrate is annealed at a temperature in the range from about 500° C. to about 1000° C.