Ferroelectric devices, interconnects, and methods of manufacture thereof

1. A ferroelectric device comprising:

a substrate;

a first electrode disposed on the substrate;

a ferroelectric layer disposed on and in contact with the first electrode; and

a second electrode disposed on and in contact with the ferroelectric layer,

wherein at least one of the first electrode and the second electrode is an organic electrode comprising a doped electroconductive organic polymer.

2. The ferroelectric device of claim 1 , wherein the conductivity of the organic electrode is 900 Siemens/centimeter or greater measured at a thickness of 65 nm.

3. The ferroelectric device claim 1 , wherein resistivity of the organic electrode is 1×10 5 ohm-cm or less.

4. The ferroelectric device claim 1 , wherein the substrate comprises an organic polymer.

5. The ferroelectric device claim 1 , wherein the ferroelectric layer is an organic ferroelectric layer comprising a fluorinated polymer, a fluorinated copolymer, or a combination comprising at least one of the foregoing.

6. The ferroelectric device claim 1 , wherein the ferroelectric layer is an inorganic ferroelectric layer.

7. The ferroelectric device claim 1 , wherein the doped electroconductive organic polymer comprises an intrinsically conductive organic polymer and a dopant in an amount effective to increase the electroconductivity of the intrinsically conductive organic polymer.

8. The ferroelectric device of claim 7 , wherein the intrinsically conductive organic polymer is poly(phenylene), poly(naphthalene), poly(azulene), poly(fluorene), poly(pyrene) poly(pyrrole), poly(carbazole), poly(indole), poly(azepine), poly(aniline) poly(thiophene), poly(3,4-ethylenedioxythiophene), poly(p-phenylene-sulfide), poly(acetylene), poly(p-phenylene vinylene), copolymers of the foregoing polymers, or a combination comprising at least one of the foregoing polymers or copolymers.

9. The ferroelectric device of claim 8 , wherein the intrinsically conductive organic polymer is poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), poly(aniline), poly(pyrrole), or a combination comprising at least one of the foregoing intrinsically conductive organic polymers.

10. The ferroelectric device claim 7 , wherein the dopant is present in an amount effective to increase the conductivity of the intrinsically conductive organic polymer by two orders of magnitude or more.

11. The ferroelectric device of claim 7 , wherein the dopant is ethylene glycol, 2-butanone, dimethylsulfoxide, dimethylformamide, glycerol, sorbitol, hexamethylphosphoramide, or a combination comprising at least one of the foregoing dopants.

12. The ferroelectric device claim 1 , wherein

the substrate is an organic substrate,

the ferroelectric layer is an organic ferroelectric layer, and

the first and second electrodes are each organic electrodes.

13. The ferroelectric device of claim 12 , wherein

the ferroelectric layer comprises poly(vinylidene fluoride-co-trifluoroethylene); and

the organic electrodes each comprises dimethylsulfoxide-doped poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate).

14. The ferroelectric device claim 1 , wherein the first electrode, the second electrode, or both, each have a thickness of 60 to 120 nm.

15. The ferroelectric device claim 1 , wherein the first electrode, the second electrode, or both are patterned.

16. The ferroelectric device of claim 1 , wherein the first electrode, the second electrode, or both comprise continuous lines.

17. The ferroelectric device of claim 1 , wherein both the first and the second electrodes comprise parallel lines; and the lines of the first electrode are orthogonal to the lines of the second electrode.

18. The ferroelectric device claim 1 , wherein the device is flexible.

19. The ferroelectric device claim 1 , wherein the device is a memory device, a capacitor, a transistor, or a diode.

20. A method of making a ferroelectric device, the method comprising:

disposing a first electrode on a substrate;

disposing a ferroelectric layer on the first electrode; and

disposing the second electrode on the ferroelectric layer, wherein at least one of the first or second electrode is an organic electrode comprising a doped electroconductive organic polymer, and wherein disposing the organic electrode comprises

forming a layer from a composition comprising an intrinsically conductive polymer, a dopant, and a solvent; and

removing the solvent from the layer to provide the electrode.

21. An electric device comprising an interconnect that electrically connects at least two elements of the electrical device, wherein the interconnect comprises a doped electroconductive organic polymer.

22. The electric device of claim 21 , comprising a ferroelectric layer and an interconnect in contact with the ferroelectric layer,

wherein the interconnect electrically connects two or more elements of the electrical device.

23. The device of claim 21 , wherein the interconnect conductivity is 900 Siemens/centimeter or greater measured at a thickness of 65 nm.

24. The device of claim 21 , wherein resistivity of the interconnect is 1×10 4 ohm-cm or less.

25. The device of claim 21 , wherein the ferroelectric layer is an organic ferroelectric layer comprising a fluorinated polymer, a fluorinated copolymer, or a combination comprising at least one of the foregoing.

26. The device of claim 21 , wherein the ferroelectric layer is an inorganic ferroelectric layer.

27. The device of claim 21 , wherein the doped electroconductive organic polymer comprises an intrinsically conductive organic polymer and a dopant in an amount effective to increase the electroconductivity of the intrinsically conductive organic polymer.

28. The device of claim 27 , wherein the dopant is present in an amount effective to increase the conductivity of the intrinsically conductive organic polymer by two orders of magnitude or more.

29. The device of claim 28 , wherein the ferroelectric layer comprises poly(vinylidene fluoride-co-trifluoroethylene); and

the interconnect comprises dimethylsulfoxide-doped poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate).

30. The device of claim 21 , wherein the device is flexible.

31. The device of claim 21 , wherein the device is a memory device, a capacitor, a diode, or a transistor.