Oxide semiconductor film and semiconductor device
An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm −1 and less than or equal to 0.7 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm −1 and less than or equal to 4.1 nm −1 . The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm −1 and less than or equal to 1.4 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm −1 and less than or equal to 7.1 nm −1 .
1. An oxide semiconductor film comprising a crystalline region,
wherein the oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm −1 and less than or equal to 0.7 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm −1 and less than or equal to 4.1 nm −1 , and
wherein the oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm −1 and less than or equal to 1.4 nm −1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm −1 and less than or equal to 7.1 nm −1 .
2. The oxide semiconductor film according to claim 1 , wherein the crystalline region comprises a crystal structure in which a c-axis is substantially perpendicular to a surface of the oxide semiconductor film.
3. The oxide semiconductor film according to claim 1 , wherein the oxide semiconductor film is in a non-single crystal state.
4. The oxide semiconductor film according to claim 2 , wherein measurement of the electron diffraction intensity is performed by irradiation with an electron beam from a direction of the c-axis.
5. The oxide semiconductor film according to claim 1 , wherein a spin density of a signal in a region where a g value is in a vicinity of 1.93 in ESR measurement of the oxide semiconductor film is lower than 1.3×10 18 spins/cm 3 .
6. The oxide semiconductor film according to claim 1 , wherein the oxide semiconductor film comprises indium and zinc.
7. A semiconductor device comprising the oxide semiconductor film according to claim 1 , the semiconductor device further comprising:
a gate electrode; and
a gate insulating film between the gate electrode and the oxide semiconductor film.