Semiconductor device and method of manufacturing the same
Disclosed is a semiconductor device including: a first electrode formed of a conductive material; a p-type first silicon carbide (SiC) semiconductor section and an n-type second SiC semiconductor section 230 , connected to the first electrode, containing carbon (C) such that a surface density distribution has a peak at a first interface with the first electrode.
1. A semiconductor device comprising:
a first electrode formed of a conductive material;
a p-type first silicon carbide (SiC) semiconductor section, connected to the first electrode, containing carbon (C) such that a surface density distribution has a peak less than 1 nm from a first interface with the first electrode; and
an n-type second SiC semiconductor section connected to the first electrode,
wherein carbon at the first interface is equal to or smaller than a single monolayer.
2. The semiconductor device according to claim 1 ,
wherein the n-type second SiC semiconductor section contains at least one element selected from a group including nitrogen (N), phosphorous (P), and arsenic (As) such that a surface density distribution has a peak at a second interface with the first electrode.
3. The semiconductor device according to claim 2 ,
wherein at least one element selected from a group including nitrogen, phosphorous, and arsenic of the second interface is equal to or smaller than a single monolayer.
4. The semiconductor device according to claim 2 ,
wherein a concentration of at least one element selected from a group including nitrogen, phosphorous, and arsenic at the second interface is equal to or higher than 1.2×10 14 /cm 2 and equal to or lower than 1.8×10 15 /cm 2 .
5. The semiconductor device according to claim 2 ,
wherein the second interface is an interface between an upper surface of the n-type second SiC semiconductor section and a bottom surface of the first electrode.
6. The semiconductor device according to claim 2 ,
wherein the surface density distribution peak exists within less than 1 nm from the second interface.
7. The semiconductor device according to claim 1 ,
wherein a concentration of carbon at the first interface is equal to or higher than 1.2×10 14 /cm 2 and equal to or lower than 1.8×10 15 /cm 2 .
8. The semiconductor device according to claim 1 ,
wherein the first interface comprises an interface between an upper surface of the first silicon carbide semiconductor section and a bottom surface of the first electrode.
9. A semiconductor device comprising:
a first electrode formed of a conductive material;
a p-type first silicon carbide (SiC) semiconductor section, connected to the first electrode, containing carbon (C) such that a surface density distribution has a peak less than 1 nm from a first interface with the first electrode; and
an n-type second SiC semiconductor section connected to the first electrode,
wherein the n-type second SiC semiconductor section contains at least one element selected from a group including nitrogen (N), phosphorous (P), and arsenic (As) such that a surface density distribution has a peak at a second interface with the first electrode, and
carbon at the first interface is equal to or smaller than a single monolayer, and at least one element selected from a group including nitrogen, phosphorous, and arsenic of the second interface is equal to or smaller than a single monolayer.
10. The semiconductor device according to claim 9 ,
wherein a concentration of carbon at the first interface is equal to or higher than 1.2×10 14 /cm 2 and equal to or lower than 1.8×10 15 /cm 2 .
11. The semiconductor device according to claim 9 ,
wherein a concentration of at least one element selected from a group including nitrogen, phosphorous, and arsenic at the second interface is equal to or higher than 1.2×10 14 /cm 2 and equal to or lower than 1.8×10 15 /cm 2 .
12. The semiconductor device according to claim 9 ,
wherein the first interface comprises an interface between an upper surface of the first silicon carbide semiconductor section and a bottom surface of the first electrode.
13. The semiconductor device according to claim 9 ,
wherein the second interface is an interface between an upper surface of the n-type second SiC semiconductor section and a bottom surface of the first electrode.
14. The semiconductor device according to claim 9 ,
wherein the surface density distribution peak exists within less than 1 nm from the second interface.