Stacked diode limiter
A stacked diode limiter, which can suppress and eliminate a malicious high-power electromagnetic pulse signal and an Intentional Electromagnetic Interference (IEMI) signal that are input to the antenna line of a wireless system and that include a communication service frequency component having a power of several kW or more, includes a stacked diode unit including one or more diode stack parts formed on a center electrode of a coaxial line formed between an input connector and an output connector, each diode stack part being configured such that a plurality of diodes are arranged in series and stacked on top of one another, and an impedance matching unit for configuring dielectrics between the connectors and the coaxial line as heterogeneous dielectrics and matching impedances between the connectors and the coaxial line.
1. A stacked diode limiter comprising:
a stacked diode unit including one or more diode stack parts formed on a center electrode of a coaxial line formed between an input connector and an output connector, each diode stack part being configured such that a plurality of diodes are arranged in series and stacked on top of one another; and
an impedance matching unit for configuring dielectrics between the connectors and the coaxial line as heterogeneous dielectrics and matching impedances between the connectors and the coaxial line.
2. The stacked diode limiter of claim 1 , wherein the stacked diode unit comprises:
a first diode stack part having two or more diodes staked on top of one another in series and formed on the center electrode of the coaxial line in an anti-parallel connection structure; and
a second diode stack part having a single diode formed on the center electrode of the coaxial line to form an anti-parallel connection structure together with an opposite diode.
3. The stacked diode limiter of claim 2 , wherein:
operating power limits of the first diode stack part and the second diode stack part are different from each other, and
one of the first diode stack part and the second diode stack part, which has a higher operating power limit is arranged closer to the input connector.
4. The stacked diode limiter of claim 2 , wherein the first diode stack part and the second diode stack part are arranged to be spaced apart from each other by a ¼ wavelength.
5. The stacked diode limiter of claim 1 , wherein the stacked diode unit comprises:
a first diode stack part m which two or more diodes are stacked on top of one another in series and formed on the center electrode of the coaxial line in a single-ended connection structure; and
a second diode stack part in which a single diode is formed on the center electrode of the coaxial line in a single-ended connection structure.
6. The stacked diode limiter of claim 5 , wherein:
operating power limits of the first diode stack part and the second diode stack part are different from each other, and
one of the first diode stack part and the second diode stack part, which has a higher operating power limit, is arranged closer to the input connector.
7. The stacked diode limiter of claim 5 , wherein the first diode stack part and the second diode stack part are arranged to be spaced apart from each other by a ¼ wavelength.
8. The stacked diode limiter of claim 1 , wherein:
the plurality of diodes are connected via soldering or conductive epoxy,
each diode stack part is soldered at a second end of a connection part having threads formed at a first end thereof, and a threaded hole corresponding to the threads is formed in the center electrode of the coaxial line, and
the diode stack part is formed on the center electrode of the coaxial line via threaded coupling between the threads and the threaded hole.
9. The stacked diode limiter of claim 1 , wherein the plurality of diodes are implemented as PIN diodes.
10. The stacked diode limiter of claim 1 , wherein the center electrode of the coaxial line on which the stacked diode unit is formed is protected by a housing, the stacked diode unit and the center electrode of the coaxial line are installed in a longitudinal hollow portion formed in the housing, and a first end of each diode stack part of the stacked diode unit comes into contact with the housing.
11. The stacked diode limiter of claim 1 , wherein:
the impedance matching unit comprises a dielectric having a hollow and conical internal structure and a tapered structure; and a conductor inserted into the dielectric and configured to have a conical and tapered structure, wherein an outer circumferential surface of a first end of the conductor is spaced apart from an inner circumferential surface of the dielectric,
an air layer is formed in a separation space between the dielectric and the conductor, and
first ends of the dielectric and the conductor are connected to the input connector.
12. The stacked diode limiter of claim 11 , wherein the first ends of the dielectric and the conductor are connected to the input connector to enclose a center electrode of the input connector.
13. The stacked diode limiter of claim 1 , further comprising an inductor for bypassing a direct current (DC) voltage generated at both ends of each diode stack part when a power limiting operation is performed by the stacked diode unit.