Semiconductor device and touch panel
View Patent ↗A touch panel whose power consumption can be reduced is provided, and an increase in the manufacturing cost of the touch panel is prevented. A photosensor which includes a light-receiving element including a non-single-crystal semiconductor layer between a pair of electrodes and a transistor including an oxide semiconductor layer in a channel formation region is provided. A touch panel which includes a plurality of pixels and the photosensor adjacent to at least one of the plurality of pixels is provided. Each of the plurality of pixels includes a pair of terminals. One of the pair of terminals is a reflective conductive film. Alternatively, each of the pair of terminals is a light-transmitting conductive film.
1. A semiconductor device comprising:
a first transistor comprising a first oxide semiconductor layer, over a substrate having an insulating surface; and
a second transistor comprising a second oxide semiconductor layer, over the substrate having the insulating surface,
wherein the first transistor is electrically connected to one of electrodes of a light-emitting element through a connection electrode,
wherein a first electrode layer electrically connected to the second oxide semiconductor layer of the second transistor is provided over an amorphous semiconductor layer,
wherein a second electrode layer is provided over the amorphous semiconductor layer,
wherein the connection electrode and the first electrode layer contain the same material,
wherein the connection electrode and the second electrode layer contain the same material, and
wherein the other of the electrodes of the light-emitting element has a light-transmitting property and overlaps with the amorphous semiconductor layer.
2. The semiconductor device according to claim 1 , the connection electrode contains a material from the group consisting of aluminum, silver, and alloy containing aluminum.
3. A semiconductor device comprising:
a plurality of pixels; and
a photosensor adjacent to at least one of the plurality of pixels,
wherein the photosensor comprises:
a light-receiving element comprising a non-single-crystal semiconductor layer between a pair of electrodes;
a power supply line electrically connected to one of the pair of electrodes;
a first transistor comprising a gate which is electrically connected to a signal line, one of a source and a drain which is electrically connected to the other of the pair of electrodes, and a channel formation region which is in a first oxide semiconductor layer;
a second transistor comprising a gate which is electrically connected to a reset line, one of a source and a drain which is electrically connected to the other of the source and the drain of the first transistor, the other of the source and the drain which is electrically connected to a ground line, and a channel formation region which is in a second oxide semiconductor layer;
a third transistor comprising a gate which is electrically connected to the other of the source and the drain the first transistor and the one of the source and the drain of the second transistor, one of a source and a drain which is electrically connected to the power supply line, and a channel formation region which is in a third oxide semiconductor layer; and
a fourth transistor comprising a gate which is electrically connected to a selection line, one of a source and a drain which is electrically connected to the other of the source and the drain of the third transistor, the other of the source and the drain which is electrically connected to a photosensor output signal line, and a channel formation region which is in a fourth oxide semiconductor layer.
4. The semiconductor device according to claim 3 ,
wherein each of the plurality of pixels comprises a fifth transistor, a liquid crystal element, and a storage capacitor.
5. The semiconductor device according to claim 3 ,
wherein each of the plurality of pixels comprises a fifth transistor, a liquid crystal element, and a storage capacitor,
wherein the liquid crystal element comprises a pair of terminals and a liquid crystal layer between the pair of terminals,
wherein one of the pair of terminals is a reflective conductive film, and is electrically connected to one of a source and a drain of the fifth transistor, and
wherein the other of the pair of terminals is a light-transmitting conductive film.
6. The semiconductor device according to claim 3 ,
wherein each of the plurality of pixels comprises a fifth transistor, a liquid crystal element, and a storage capacitor,
wherein the liquid crystal element comprises a pair of terminals and a liquid crystal layer between the pair of terminals,
wherein one of the pair of terminals is electrically connected to one of a source and a drain of the fifth transistor, and
wherein each of the pair of terminals is a light-transmitting conductive film.
7. The semiconductor device according to claim 3 ,
wherein the non-single-crystal semiconductor layer is an i-type amorphous silicon layer.
8. A semiconductor device comprising:
a plurality of pixels; and
a photosensor adjacent to at least one of the plurality of pixels,
wherein the photosensor comprises:
a light-receiving element comprising a non-single-crystal semiconductor layer between a pair of electrodes;
a ground line electrically connected to one of the pair of electrodes;
a first transistor comprising a gate which is electrically connected to a signal line, one of a source and a drain which is electrically connected to the other of the pair of electrodes, and a channel formation region which is in a first oxide semiconductor layer;
a second transistor comprising a gate which is electrically connected to a reset line, one of a source and a drain which is electrically connected to the other of the source and the drain the first transistor, the other of the source and the drain of which is electrically connected to a power supply line, and a channel formation region which is in a second oxide semiconductor layer;
a third transistor comprising a gate which is electrically connected to the other of the source and the drain of the first transistor and the one of the source and the drain of the second transistor, one of a source and a drain which is electrically connected to the power supply line, and a channel formation region which is in a third oxide semiconductor layer; and
a fourth transistor comprising a gate which is electrically connected to a selection line, one of a source and a drain which is electrically connected to the other of the source and the drain the third transistor, the other of the source and the drain of which is electrically connected to a photosensor output signal line, and a channel formation region which is in a fourth oxide semiconductor layer.
9. The semiconductor device according to claim 8 ,
wherein each of the plurality of pixels comprises a fifth transistor, a liquid crystal element, and a storage capacitor.
10. The semiconductor device according to claim 8 ,
wherein each of the plurality of pixels comprises a fifth transistor, a liquid crystal element, and a storage capacitor,
wherein the liquid crystal element comprises a pair of terminals and a liquid crystal layer between the pair of terminals,
wherein one of the pair of terminals is a reflective conductive film, and is electrically connected to one of a source and a drain of the fifth transistor, and
wherein the other of the pair of terminals is a light-transmitting conductive film.
11. The semiconductor device according to claim 8 ,
wherein each of the plurality of pixels comprises a fifth transistor, a liquid crystal element, and a storage capacitor,
wherein the liquid crystal element comprises a pair of terminals and a liquid crystal layer between the pair of terminals,
wherein one of the pair of terminals is electrically connected to one of a source and a drain of the fifth transistor, and
wherein each of the pair of terminals is a light-transmitting conductive film.
12. The semiconductor device according to claim 8 ,
wherein the non-single-crystal semiconductor layer is an i-type amorphous silicon layer.