Method for making oxide semiconductor device
It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first conductive layer over a substrate;
forming a first insulating layer over the first conductive layer;
forming an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer overlapping the first conductive layer;
heating the oxide semiconductor layer to increase crystallinity of the oxide semiconductor layer;
forming a second conductive layer and a third conductive layer which are in contact with the oxide semiconductor layer;
forming a second insulating layer over the oxide semiconductor layer, the second conductive layer, and the third conductive layer; and
forming a fourth conductive layer over the second insulating layer, the fourth conductive layer overlapping a part of the oxide semiconductor layer,
wherein the fourth conductive layer overlaps the second conductive layer and the third conductive layer,
wherein the oxide semiconductor layer comprises a first region and a second region, the first region being located over the second region,
wherein the first region comprises a crystal, and a c-axis of the crystal is substantially perpendicular to the second insulating layer,
wherein the second region has a lower crystallinity than the first region, and
wherein all the metal elements included in the first region are included in the second region, and all the metal elements included in the second region are included in the first region.
2. The method for manufacturing a semiconductor device, according to claim 1 , wherein a temperature of the heating is 500° C. or higher.
3. The method for manufacturing a semiconductor device, according to claim 1 , wherein the oxide semiconductor layer is formed by sputtering with the use of an In—Ga—Zn—O-based target.
4. A method for manufacturing a semiconductor device, comprising the steps of:
forming a first conductive layer over a substrate;
forming a first insulating layer over the first conductive layer;
forming an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer overlapping the first conductive layer;
heating the oxide semiconductor layer to remove at least part of hydrogen contained in the oxide semiconductor layer;
forming a second conductive layer and a third conductive layer which are in contact with the oxide semiconductor layer;
forming a second insulating layer over the oxide semiconductor layer, the second conductive layer, and the third conductive layer; and
forming a fourth conductive layer over the second insulating layer, the fourth conductive layer overlapping a part of the oxide semiconductor layer,
wherein the fourth conductive layer overlaps the second conductive layer and the third conductive layer,
wherein the oxide semiconductor layer comprises a first region and a second region, the first region being located over the second region,
wherein the first region comprises a crystal, and a c-axis of the crystal is substantially perpendicular to the second insulating layer,
wherein the second region has a lower crystallinity than the first region, and
wherein all the metal elements included in the first region are included in the second region, and all the metal elements included in the second region are included in the first region.
5. The method for manufacturing a semiconductor device, according to claim 4 , wherein a temperature of the heating is 500° C. or higher.
6. The method for manufacturing a semiconductor device, according to claim 4 , wherein the oxide semiconductor layer is formed by sputtering with the use of an In—Ga—Zn—O-based target.