Mixed ionic-electronic conductor-based radiation detectors and methods of fabrication
A method of fabricating a mixed ionic-electronic conductor (e.g. TlBr)-based radiation detector having halide-treated surfaces and associated methods of fabrication, which controls polarization of the mixed ionic-electronic MIEC material to improve stability and operational lifetime.
1. A method of fabricating a mixed ionic-electronic conductor (MIEC)-based radiation detector, comprising:
forming a halide-treated surface on a MIEC crystal to increase the stability and resistance to degradation of the MIEC crystal under an applied bias, wherein the MIEC crystal is TlBr crystal, and the halide-treated surface is one of a TlBrF or TlBrCl surface.
2. The method of claim 1 ,
wherein the TlBr crystal is a ternary compositions of TlBr.
3. The method of claim 1 ,
wherein the step of forming the TlBrF or TlBrCl surface on the TlBr crystal comprises incorporating fluorine or chlorine, respectively, into a TlBr surface of the TlBr crystal.
4. The method of claim 3 ,
wherein the step of incorporating fluorine or chlorine comprises wet etching the TlBr surface of the TlBr crystal with a chemical containing fluorine or chlorine, respectively to remove a surface damage layer.
5. The method of claim 3 ,
wherein the step of incorporating fluorine or chlorine comprises implanting fluorine or chlorine ions, respectively, into the TlBr surface of the TlBr crystal.
6. The method of claim 1 ,
wherein the step of forming the TlBrF or TlBrCl surface on the TlBr crystal comprises depositing TlBrF or TlBrCl, respectively, on a TlBr surface of the TlBr crystal.
7. The method of claim 1 ,
further comprising forming a cathode on the halide-treated surface, wherein the cathode material comprises a metal having an oxidation state selected from the group consisting of 2, 4, 5, and 6.
8. The method of claim 7 ,
wherein the metal is selected from the group consisting of Pt and Ni.
9. The method of claim 1 ,
further comprising forming an anode on the halide-treated surface, wherein the anode material comprises a metal having an oxidation state selected from the group consisting of 4, 5, and 6.
10. The method of claim 9 ,
wherein the metal is selected from the group consisting of Pt.
11. A mixed ionic-electronic conductor (MIEC)-based radiation detector comprising:
a MIEC crystal having a halide-treated surface to increase the stability and resistance to degradation of the MIEC crystal under an applied bias,
wherein the MIEC crystal is TlBr crystal, and the halide-treated surface is one of a TlBrF or TlBrCl surface.
12. The mixed ionic-electronic conductor (MIEC)-based radiation detector of claim 11 ,
wherein the TlBr crystal is a ternary compositions of TlBr.
13. The mixed ionic-electronic conductor (MIEC)-based radiation detector of claim 11 ,
further comprising a cathode formed on the halide-treated surface, wherein the cathode comprise a metal having an oxidation state selected from the group consisting of 2, 4, 5, and 6.
14. The mixed ionic-electronic conductor (MIEC)-based radiation detector of claim 13 ,
wherein the cathode comprises a metal selected from the group consisting of Pt and Ni.
15. The mixed ionic-electronic conductor (MIEC)-based radiation detector of claim 11 ,
further comprising an anode formed on the halide-treated surface, wherein the anode comprise a metal having an oxidation state selected from the group consisting of 4, 5, and 6.
16. The mixed ionic-electronic conductor (MIEC)-based radiation detector of claim 15 ,
wherein the anode comprises Pt.