IP Library › Granted Patent US 9,000,404
Granted Patent B2
US 9,000,404 · App. 14/135,283 · Granted Apr 7, 2015

Systems and methods for optics cleaning in an EUV light source

Inventors: Alexander N. Bykanov (San Diego, CA); Silvia De Dea (San Diego, CA); Alexander I. Ershov (Escondido, CA); Vladimir B. Fleurov (Escondido, CA); Igor V. Fomenkov (San Diego, CA); William N. Partlo (Poway, CA)
Assignee: ASML Netherlands, B.V.
H05G2/008G03F7/70925H05G2/005
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Quick Facts
Patent No.
US 9,000,404
App. No.
14/135,283
Granted
Apr 7, 2015
Kind
B2
Abstract

An extreme-ultraviolet (EUV) light source is described herein comprising an optic; a primary EUV light radiator generating an EUV light emitting plasma and producing a deposit on said optic; and a cleaning system comprising a gas and a secondary light radiator, the secondary light radiator generating a laser produced plasma and producing a cleaning species with the gas.

Claims (24)

1. An extreme ultraviolet (EUV) light source comprising;

a chamber;

an optic;

a primary EUV light radiator generating in said chamber using first target material droplets an EUV light emitting plasma and producing a deposit on said optic; and

a cleaning system generating in said chamber a laser produced plasma having cleaning species, said laser produced plasma having cleaning species is different from said EUV light emitting plasma, wherein said laser produce plasma having cleaning species is generated during intervening periods when said EUV light emitting plasma is not generated, wherein said primary EUV light radiator is a laser produced plasma and said light source further comprises a material delivery system having at least one component that is used to generate said first source material droplets for said primary EUV light radiator and second target material droplets for use in generating said laser produced plasma having cleaning species.

2. The high source as recited in claim 1 , further comprising a first laser source that generates a first laser beam for generating the primary EUV light radiator laser produced plasma, said cleaning system includes a secondary light generator generating a second laser beam for generating the laser produced plasma having cleaning species.

3. The light source as recited in claim 1 wherein the cleaning system includes a secondary light generator, said secondary light radiator comprising a focused laser beam producing breakdown in a gas.

4. The light source as recited in claim 3 wherein said gas comprises hydrogen and said cleaning species comprises hydrogen radicals.

5. The light source as recited in claim 1 wherein said first target material droplets include molecules containing carbon.

6. The light source as recited in claim 5 wherein the material having molecules containing carbon comprises oil.

7. The light source as recited in claim 1 further comprising a flow control system to cause a flow pattern of a first gas in said chamber to be different from a flow pattern of a second gas, said flow pattern of said first gas exists in said chamber while generating said EUV light emitting plasma, said flow pattern of said second gas exists in said chamber while generating said laser produced plasma having cleaning species.

8. The light source as recited in claim 1 further comprising a pressure control system to cause a first gas pressure in said chamber to be different from a second gas pressure in said chamber, said first gas pressure exists in said chamber while generating said EUV light emitting plasma, said second gas pressure exists in said chamber while generating said laser produced plasma having cleaning species.

9. The light source as recited in claim 1 further comprising a composition control system to cause a first gas composition in said chamber to be different from a second gas composition in said chamber, said first gas composition exists in said chamber while generating said EUV light emitting plasma, said second gas composition exists in said chamber while generating said laser produced plasma having cleaning species.

10. A method for generating EUV light, comprising:

providing a chamber;

providing an optic;

generating in said chamber, using a primary EUV light radiator and first target material droplets, an EUV light emitting plasma, wherein said EUV light emitting plasma producing a deposit on said optic; and

generating in said chamber, using a cleaning system, said laser produced plasma having cleaning species, said laser produced plasma having cleaning species is different from said EUV light emitting plasma, wherein said laser produce plasma having cleaning species is generated during intervening periods when said EUV light emitting plasma is not generated, wherein the primary EUV light radiator is a laser produced plasma and said method further comprises providing a material delivery system having at least one component that is used to generate said first target material droplets for said primary EUV light radiator and second target material droplets for use in generating said laser produced plasma having cleaning species.

11. The method as recited in claim 10 wherein the cleaning system includes a secondary light generator, said secondary light radiator comprising a focused laser beam producing breakdown in a gas.

12. The method as recited in claim 11 wherein said gas comprises hydrogen and said cleaning species comprises hydrogen radicals.

13. The method as recited in claim 10 wherein said first target material droplets include molecules containing carbon.

14. The method as recited in claim 10 further comprising providing a flow control system, said flow control system causing a flow pattern of a first gas in said chamber to be different from a flow pattern of a second gas, said flow pattern of said first gas exists in said chamber while generating said EUV light emitting plasma, said flow pattern of said second gas exists in said chamber while generating said laser produced plasma having cleaning species.

15. The method as recited in claim 10 further comprising providing a pressure control system, said pressure control system causing a first gas pressure in said chamber to be different from a second gas pressure in said chamber, said first gas pressure exists in said chamber while generating said EUV light emitting plasma, said second gas pressure exists in said chamber while generating said laser produced plasma having cleaning species.

16. The method as recited in claim 10 further comprising providing a composition control system, said composition control system causing a first gas composition in said chamber to be different from a second gas composition in said chamber, said first gas composition exists in said chamber while generating said EUV light emitting plasma, said second gas composition exists in said chamber while generating said laser produced plasma having cleaning species.

Continuity (3)
Continuation 13088166 · Apr 15, 2011
Provisional Application 61464278 · Mar 2, 2011
Related Publication 20140110609A1 · Apr 24, 2014