Microelectromechanical system device including a metal proof mass and a piezoelectric component
This disclosure provides systems, apparatus, and devices and methods of fabrication for electromechanical devices. In one implementation, an apparatus includes a metal proof mass and a piezoelectric component as part of a MEMS device. Such apparatus can be particularly useful for MEMS gyroscope devices. For instance, the metal proof mass, which may have a density several times larger than that of silicon, is capable of reducing the quadrature and bias error in a MEMS gyroscope device, and capable of increasing the sensitivity of the MEMS gyroscope device.
1. An apparatus comprising:
a metal layer;
a first dielectric layer disposed on the metal layer;
a first electrode layer disposed on the first dielectric layer;
a piezoelectric layer disposed on the first electrode layer, the piezoelectric layer configured to respond to at least one of an electric field or a mechanical force, wherein an entire area of the metal layer is equal to or greater than an entire area of the piezoelectric layer;
a second electrode layer disposed on the piezoelectric layer, the first electrode layer and the second electrode layer configured to apply the electric field across the piezoelectric layer or to sense an electric field generated by the piezoelectric layer due to the mechanical force; and
a second dielectric layer disposed on the second electrode layer.
2. The apparatus of claim 1 , where the metal layer is configured as a proof mass.
3. The apparatus of claim 1 , further comprising:
a second metal layer disposed on the second dielectric layer.
4. The apparatus of claim 1 , wherein a thickness of the metal layer is greater than about 5 micrometers.
5. The apparatus of claim 1 , wherein a thickness of the piezoelectric layer is in the range of about 0.5 to 3 micrometers.
6. The apparatus of claim 1 , wherein at least one of a thickness of the first electrode layer or a thickness of the second electrode layer are in the range of about 100 to 300 nanometers.
7. The apparatus of claim 1 , wherein at least one of a thickness of the first dielectric layer or a thickness of the second dielectric layer are in the range of about 100 to 300 nanometers.
8. The apparatus of claim 1 , wherein a thickness of the metal layer is greater than a combined thickness of the first dielectric layer, the first electrode layer, the piezoelectric layer, the second electrode layer, and the second dielectric layer.
9. The apparatus of claim 1 , wherein the metal layer includes at least one of nickel, a nickel-manganese alloy, and a nickel-cobalt alloy.
10. The apparatus of claim 1 , wherein the piezoelectric layer includes aluminum nitride.
11. The apparatus of claim 1 , wherein the first electrode layer and the second electrode layer include a metal selected from the group consisting of copper, platinum, molybdenum, tungsten, ruthenium, gold and aluminum.
12. The apparatus of claim 1 , wherein the first dielectric layer and the second dielectric layer include silicon oxide.
13. The apparatus of claim 1 , wherein a root mean square roughness of the piezoelectric layer is less than about 1 nanometer.