Type-switching transistors, electronic devices including the same, and methods of operating the type-switching transistors and electronic devices
Type-switching transistors, electronic devices including the same, and methods of operating thereof are provided. A type-switching transistor may include a plurality of gates corresponding to a channel layer. The plurality of gates may include a first gate for switching a type of the transistor and a second gate for controlling ON/OFF characteristics of the channel layer. The first and second gates may be disposed on one side of the channel layer so that the channel layer is not disposed between the first and second gates.
1. A type-switching transistor comprising:
a channel layer;
a source electrode that contacts a first region of the channel layer;
a drain electrode that contacts a second region of the channel layer; and
a plurality of gates comprising: a first gate configured to switch a type of the transistor, and a second gate configured to control characteristics of the channel layer,
wherein the first and second gates are disposed on a surface of the channel layer, and
wherein at least one of the first and second gates does not overlap the channel layer and the channel layer does not overlap the at least one of the first and second gates.
2. The type-switching transistor of claim 1 , wherein the channel layer comprises an ambipolar material.
3. The type-switching transistor of claim 1 , wherein the channel layer comprises a carbon nanotube (CNT).
4. The type-switching transistor of claim 1 , wherein the channel layer comprises graphene.
5. The type-switching transistor of claim 1 , wherein, when a first voltage is applied to the first gate, the transistor is configured to operate as an N-type transistor, and when a second voltage that is different from the first voltage is applied to the first gate, the transistor is configured to operate as a P-type transistor.
6. The type-switching transistor of claim 1 , wherein, when the transistor is configured as an N-type transistor, if a third voltage is applied to the second gate, the channel layer is in an OFF state, and if a fourth voltage that is greater than the third voltage is applied to the second gate, the channel layer is in an ON state.
7. The type-switching transistor of claim 1 , wherein, when the transistor is configured as a P-type transistor, if a fifth voltage is applied to the second gate, the channel layer is in an OFF state, and if a sixth voltage that is smaller than the fifth voltage is applied to the second gate, the channel layer is in an ON state.
8. The type-switching transistor of claim 1 , wherein the plurality of gates are disposed on a same side of the channel layer.
9. The type-switching transistor of claim 8 , wherein the plurality of gates are disposed above the channel layer.
10. The type-switching transistor of claim 8 , wherein the plurality of gates are disposed below the channel layer.
11. The type-switching transistor of claim 1 , wherein the plurality of gates are disposed in a lateral direction of the channel layer, and the first gate is disposed in a first position that is lower than the channel layer, and the second gate is disposed in a second position that is higher than the channel layer.
12. The type-switching transistor of claim 11 , wherein centers of the first and second gates are disposed in a same vertical line.
13. The type-switching transistor of claim 11 , wherein centers of the first and second gates are disposed in different vertical lines.
14. The type-switching transistor of claim 1 , wherein a distance between the first and second gates is greater than or equal to 1 nm.
15. A method of operating a type-switching transistor comprising a channel layer, a source electrode that contacts a first region of the channel layer, a drain electrode that contacts a second region of the channel layer, a first gate configured to switch a type of the transistor, and a second gate configured to control characteristics of the channel layer, wherein the first and second gates are disposed on a surface of the channel layer, and wherein at least one of the first and second gates does not overlap the channel layer and the channel layer does not overlap the at least one of the first and second gates, the method comprising:
switching a type of the transistor to a first type by applying a first voltage to the first gate; and
driving the transistor using the second gate, the source electrode and the drain electrode.
16. The method of claim 15 , further comprising:
switching the type of the transistor to a second type by applying a second voltage to the first gate; and
driving the transistor by using the second gate, the source electrode and the drain electrode.
17. An electronic device comprising a type-switching transistor that comprises a channel layer, a source electrode that contacts a first region of the channel layer, a drain electrode that contacts a second region of the channel layer, a first gate configured to switch a type of the transistor, and a second gate configured to control characteristics of the channel layer, wherein the first and second gates are disposed on a surface of the channel layer, and wherein at least one of the first and second gates does not overlap the channel layer and the channel layer does not overlap the at least one of the first and second gates.
18. The electronic device of claim 17 , wherein the electronic device comprises a logic device.
19. The electronic device of claim 18 , wherein the electronic device comprises an inverter.
20. The electronic device of claim 19 , wherein the inverter is a resistor load type inverter comprising the type-switching transistor and a resistor connected to the type-switching transistor.
21. The electronic device of claim 19 , wherein, when the type-switching transistor is configured to operate as a first type transistor, the electronic device outputs logic 0 in response to an input of logic 1, and
wherein when the type-switching transistor is configured to operate as a second type transistor, the electronic device outputs logic 1 in response to an input of logic 1.
22. A logic device comprising:
a type-switching transistor; and
a resistor connected to the transistor,
wherein the type-switching transistor comprises a plurality of gates disposed on a surface of the channel layer, and the plurality of gates comprises a first gate configured to switch a type of the type-switching transistor and a second gate configured to control characteristics of a channel layer,
wherein at least one of the first and second gates does not overlap the channel layer and the channel layer does not overlap the at least one of the first and second gates,
wherein when the type-switching transistor is configured as a first type, the logic device outputs logic 0 in response to an input of logic 1, and
wherein when the type-switching transistor is configured as a second type, the logic device outputs logic 1 in response to the input of logic 1.
23. The logic device of claim 22 , wherein the plurality of gates are spaced apart from each other in a horizontal direction.
24. The logic device of claim 22 , wherein the plurality of gates are disposed in a lateral direction of the channel layer, and the first gate is disposed in a first position that is lower than the channel layer, and the second gate is disposed in a second position that is higher than the channel layer.
25. The logic device of claim 22 , wherein a channel layer of the transistor comprises an ambipolar material.
26. The logic device of claim 25 , wherein the channel layer comprises a carbon-based material.
27. The logic device of claim 25 , wherein the channel layer comprises a carbon nanotube (CNT).
28. The logic device of claim 25 , wherein the channel layer comprises graphene.
29. A type-switching transistor comprising:
a channel layer;
a gate insulating layer;
a source electrode that contacts a first region of the channel layer;
a drain electrode that contacts a second region of the channel layer;
a first gate configured to switch a type of the transistor; and
a second gate configured to control characteristics of the channel layer;
wherein the first and second gates are disposed in a lateral direction of the channel layer,
wherein at least one of the first and second gates does not overlap the channel layer and the channel layer does not overlap the at least one of the first and second gates, and
wherein the first and second gates are disposed on a first side of the gate insulating layer and the channel layer is disposed on a second side of the gate insulating layer opposite the first side of the gate insulating layer.
30. The type-switching transistor of claim 29 , wherein the gate insulating layer is formed from one of a silicon oxide, a silicon oxynitride and a silicon nitride.
31. The type-switching transistor of claim 29 , wherein the gate insulating layer is formed of a high-k material having a higher dielectric constant than silicon nitride.
32. The type-switching transistor of claim 29 , wherein the gate insulating layer is a single layer structure.
33. The type-switching transistor of claim 29 , wherein, if a first voltage is applied to the first gate, the transistor is switched to an N-type transistor, and if a second voltage different from the first voltage is applied to the first gate, the transistor is switched to a P-type transistor.
34. The type-switching transistor of claim 29 , wherein when the transistor is switched to an N-type transistor, the channel layer is in an OFF state if a third voltage is applied to the second gate, and the channel layer is in an ON state if a fourth voltage greater than the third voltage is applied to the second gate.
35. The type-switching transistor of claim 29 , wherein when the transistor is switched a P-type transistor, the channel layer is in an OFF state if a fifth voltage is applied to the second gate, and the channel layer is in an ON state if a sixth voltage that is smaller than the fifth voltage is applied to the second gate.