Fin structure of semiconductor device
The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material having the first lattice constant; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and a pair of notches extending into opposite sides of the middle portion; and an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches.
1. A fin field effect transistor (FinFET) comprising:
a substrate comprising a major surface;
a fin structure comprising:
a lower portion protruding from the major surface of the substrate, the lower portion comprising a first semiconductor material having a first lattice constant;
an upper portion comprising the first semiconductor material having the first lattice constant;
a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and
a pair of notches extending into opposite sides of the second semiconductor material of the fin structure; and
an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches.
2. The FinFET of claim 1 , wherein the pair of notches extends in a channel portion of the FinFET.
3. The FinFET of claim 1 , wherein the pair of notches extends from a source/drain portion to a channel portion of the FinFET.
4. The FinFET of claim 1 , wherein a height between the top surface of the isolation structure and the top surface of the pair of notches is in the range of about 1 nm to about 20 nm.
5. The FinFET of claim 1 , wherein a ratio of a maximum width of one of the pair of notches to a minimum with of the second semiconductor material is from about 0.1 to about 2.
6. The FinFET of claim 1 , wherein a first maximum height of one of the pair of notches is greater than a second maximum height of the second semiconductor material.
7. The FinFET of claim 6 , wherein a ratio of the first maximum height to a second maximum height is from about 1.05 to 1.2.
8. The FinFET of claim 1 , wherein the pair of notches comprises Geo x or SiGeO x .
9. The FinFET of claim 1 , wherein the second semiconductor material comprises Ge or SiGe.
10. A fin field effect transistor (FinFET) comprising:
a substrate comprising a major surface;
a fin structure comprising:
a lower portion protruding from the major surface of the substrate, the lower portion comprising a first semiconductor material having a first lattice constant;
an upper portion comprising the first semiconductor material having the first lattice constant; and
a middle portion between the lower portion and upper portion, wherein the middle portion comprises a semiconductor oxide and a second semiconductor material, the semiconductor oxide extending from sidewalls of the fin structure into the fin structure and surrounding the second semiconductor material, wherein the second semiconductor material has a second lattice constant different from the first lattice constant; and
an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the semiconductor oxide.
11. The FinFET of claim 10 , wherein the semiconductor oxide extends in a channel portion of the FinFET.
12. The FinFET of claim 11 , wherein the semiconductor oxide extends from a source/drain portion to a channel portion to of the FinFET.
13. The FinFET of claim 10 , wherein a height between the top surface of the isolation structure and the top surface of the semiconductor oxide is in the range of about 1 nm to about 20 nm.
14. The FinFET of claim 10 , wherein a ratio of a maximum width of the second semiconductor material to a maximum width of the semiconductor oxide is from about 0.1 to about 0.3.
15. The FinFET of claim 10 , wherein a ratio of a maximum height of the second semiconductor material to a maximum height of the semiconductor oxide is from about 0.1 to about 0.5.
16. The FinFET of claim 10 , wherein the semiconductor oxide comprises Geo x or SiGeO x .
17. The FinFET of claim 10 , wherein the second semiconductor material comprises Ge or SiGe.
18. A fin field effect transistor (FinFET) comprising:
an isolation structure disposed over a substrate; and
a fin protruding from a major surface of the substrate, the isolation structure surrounding the fin structure, wherein the fin comprises:
a first semiconductor material proximal the substrate, the first semiconductor material having a first lattice constant;
a second semiconductor material disposed on a side of the first semiconductor material facing away from the substrate, the second semiconductor material having a second lattice constant different from the first lattice constant;
a third semiconductor material disposed on a side of the second semiconductor material facing away from the substrate, the third semiconductor material having the first lattice constant; and
a plurality of notches extending from sidewalls of the fin into the fin and surrounding the second semiconductor material, the plurality of notches further surrounding an interface between the first semiconductor material and the second semiconductor material and an interface between the second semiconductor material and the third semiconductor material.
19. The FinFET of claim 18 , wherein the plurality of notches comprises an oxide of the second semiconductor material.
20. The FinFET of claim 18 , wherein the second semiconductor material comprises Ge or SiGe.