Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes: a semiconductor substrate formed with an element region; a first conductive type first region formed in the element region and located on a surface side of the semiconductor substrate; a second conductive type second region located in a deeper position than the first region in the element region and contacting the first region; a first conductive type third region located in a deeper position than the second region in the element region, contacting the second region, and separated from the first region by the second region; and a gate disposed in a trench extending from the surface to reach the third region, and contacting a range of the second region via the insulation film. A thickness of the second region in a depth direction is gradually increased from the peripheral part of the element region to the central part thereof
1. A semiconductor device comprising:
a semiconductor substrate formed with an element region;
a first conductive type first region that is formed in the element region and located on a surface side of the semiconductor substrate;
a second conductive type second region that is located in a deeper position than the first region in the element region and contacts the first region;
a first conductive type third region that is located in a deeper position than the second region in the element region, contacts the second region, and is separated from the first region by the second region; and
a gate that is disposed in a trench extending from the surface of the semiconductor substrate to reach the third region and contacts a range of the second region that separates the first region from the third region via an insulation film, wherein
a thickness of the second region in a depth direction is gradually increased from a peripheral part of the element region to a central part of the element region.
2. A method of manufacturing the semiconductor device according to claim 1 , comprising:
forming a resist mask having plural openings that are disposed at intervals from each other in a surface of the semiconductor substrate; and
introducing a second conductive impurity into a depth for forming a range of the semiconductor substrate's second region that is exposed from the plural openings after formation of the resist mask, wherein
an area of each of the openings of the resist mask is gradually increased from the peripheral part of the element region to the central part.
3. The method of manufacturing the semiconductor device according to claim 2 further comprising:
introducing a first conductive impurity to a depth for forming a range of the semiconductor substrate's first region that is exposed from the plural openings after the formation of the resist mask.