IP Library Granted Patent US 9,008,467
Granted Patent B2
US 9,008,467 · App. 12/262,312 · Granted Apr 14, 2015

Nanoparticle-based quantum confined stark effect modulator

Inventors: Nathaniel Quitoriano (Pacifica, CA); Marco Fiorentino (Mountain View, CA); David Fattal (Mountain View, CA)
Assignee: Hewlett-Packard Development Company, L.P.
G02F1/025G02F2202/36G02F2001/0157G02F2201/063
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Quick Facts
Patent No.
US 9,008,467
App. No.
12/262,312
Granted
Apr 14, 2015
Kind
B2
Abstract

An optical modulator includes a first layer that is transparent or semitransparent over a range of optical wavelengths; a modulation layer made from nanoparticles embedded in a matrix; a first electrode and a second electrode that create an electrical field that passes through the modulation layer. A method for forming a nanoparticle modulator includes obtaining and preparing a substrate; forming sub-layers on the substrate; forming a nanoparticle modulator layer, where the nanoparticle modulator layer is an electrical insulator and has a thickness of less than the wavelength of light the nanoparticle QCSE modulator is designed to modulate.

Claims (34)

1. An optical modulator comprising:

a first layer, said first layer being transparent or semitransparent over a range of optical wavelengths;

a modulation layer comprising nanoparticles embedded in a matrix, said modulation layer being contiguous to said first layer;

first and second electrodes, said first and said second electrodes being configured such that a voltage potential across said first and said second electrodes creates an electrical field through said modulation layer.

wherein said nanoparticles in said matrix are under a compressive or tensile strain such that a band gap of said nanoparticles is shifted in response to said compressive or tensile strain.

2. The optical modulator of claim 1 , wherein said modulation layer is sandwiched between said first layer and a second layer, said second layer being transparent or semitransparent over a range of optical wavelengths.

3. The optical modulator of claim 2 , wherein said modulation layer has an index of refraction substantially lower than said first layer and said second layer; said modulation layer having a thickness substantially less than a wavelength of light passing through said optical modulator.

4. The optical modulator of claim 3 , wherein said modulation layer acts as a slot waveguide.

5. The optical modulator of claim 1 , wherein said nanoparticles are mechanically deposited onto a surface of said first layer and said matrix is deposited over said nanoparticles.

6. The optical modulator of claim 1 , wherein said nanoparticles are germanium nanoparticles and said matrix is a silicon nitride compound.

7. The optical modulator of claim 1 , wherein said modulator layer is formed by depositing a precursor layer, then thermally oxidizing said precursor layer to form said nanoparticles and said matrix.

8. The optical modulator of claim 7 , wherein said precursor layer is a silicon germanium compound.

9. The optical modulator of claim 1 , wherein said optical modulator is a ring resonator, said ring resonator being optically coupled to a tangential waveguide.

10. The optical modulator of claim 1 , wherein said optical modulator is formed as an integral portion of a waveguide connected at a first end to an optical source and connected at a second end to an optical detector.

11. The optical modulator of claim 1 , wherein said modulation layer is an electrical insulator.

12. A nanoparticle Quantum Confined Stark Effect (QCSE) modulator comprising:

a first layer, said first layer being transparent or semitransparent over a range of optical wavelengths;

a second layer, said second layer being transparent or semitransparent over a range of optical wavelengths;

a modulation layer comprising nanoparticles embedded in a matrix, said modulation layer being sandwiched between said first layer and said second layer; said modulation layer being an electrical insulator; said modulation layer being further configured to act as a slot waveguide;

a first electrode;

a second electrode, said first and said second electrodes being configured such that a voltage potential across said first and said second electrodes creates an electrical field that passes through said modulation layer;

wherein said matrix applies a compressive or tensile strain to said nanoparticles such that a band gap of said nanoparticles is shifted in response to said compressive or tensile strain.

13. The modulator of claim 12 , wherein said nanoparticles are germanium nanoparticles.

14. A method for forming a nanoparticle Quantum Confined Stark Effect (QCSE) modulator comprising:

obtaining and preparing a substrate;

forming sub-layers on said substrate;

determining a wavelength of light that said modulator is to modulate;

forming a nanoparticle modulator layer, said nanoparticle modulator layer being an electrical insulator and having a thickness of less than said wavelength of light said nanoparticle QCSE modulator is designed to modulate; and

depositing upper layers over said nanoparticle modulator layer.

15. The method of claim 14 , wherein said nanoparticle modulator layer is formed by depositing a precursor layer or layers, then altering said precursor layers to produce nanoparticles embedded within a matrix.

16. The method of claim 15 , wherein said nanoparticle modulator layer is formed from said precursor layer or layers by thermal oxidization.

17. The method of claim 14 , wherein said nanoparticle modulator layer is formed by mechanically depositing nanoparticles onto a desired surface, then overcoating said nanoparticles with a matrix.

18. The method of claim 17 , wherein said overcoating said nanoparticles with said matrix creates strain within said nanoparticles such that optical absorption characteristics of said nanoparticles are altered.

19. The method of claim 14 , further comprising tuning a bandgap of said nanoparticles by introducing a corresponding amount of compressive or tensile strain on said nanoparticles.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 9, 2015
From: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
To: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Reel/Frame 037079/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 2, 2009
From: QUITORIANO, NATHANIEL J.; FIORENTINO, MARCO; FATTAL, DAVID A.
To: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
Reel/Frame 023169/0787 →
Continuity (2)
Provisional Application 61038343 · Mar 20, 2008
Related Publication 20090238511A1 · Sep 24, 2009