Semiconductor memory device and method of fabricating the same
A method for fabricating semiconductor memory device, includes providing a semiconductor substrate; forming a lower region which includes a first data storage device, which is carried by the semiconductor substrate; forming a switching device which is carried by the first data storage device; and forming an upper region which includes a second data storage device, which is carried by the switching device. The step of forming the first storage device includes forming a first electrode having a cylindrical or pillar shape, the first electrode being connected to the switching device.
1. A method for fabricating semiconductor memory device, comprising:
providing a semiconductor substrate;
forming a lower region, which includes a first data storage device, wherein the lower region is carried by the semiconductor substrate;
forming a switching device, which is carried by the first data storage device; and
forming an upper region, which includes a second data storage device, wherein the upper region is carried by the switching device;
wherein the step of forming the first storage device includes forming a first electrode having a cylindrical or pillar shape, the first electrode being connected to the switching device.
2. The method of claim 1 , wherein the step of forming the first data storage device includes forming a pillar shape pattern by depositing and planarizing an insulation film.
3. The method of claim 2 , wherein the step of forming the first data storage device includes forming a first electrode by depositing a first metal and/or first poly-silicon film on the surface of the pillar shape pattern, and the depositing a dielectric film on the surface of the first electrode.
4. The method of claim 3 , wherein the step of forming the first data storage device includes forming a second electrode by depositing second metal and/or second poly-silicon film on the surface of the dielectric film.
5. The method of claim 4 , wherein the step of forming the first data storage device includes exposing a portion of the dielectric film, and depositing an insulation film on the exposed surface.
6. The method of claim 4 , wherein the step of forming the second electrode includes using atomic layer deposition.
7. The method of claim 4 , wherein the step of forming the second electrode includes depositing a metal material.
8. The method of claim 4 , wherein the step of forming the second electrode includes depositing a poly-silicon material.
9. The method of claim 5 , wherein the step of exposing the portion of the dielectric film includes using a spacer etching process,
10. The method of claim 3 , wherein the step of depositing the dielectric film includes depositing one of aluminum oxide (Al2O3), hafnium oxide (HfO2) and zirconium oxide (ZrO2).
11. A method fir fabricating a semiconductor memory device, comprising:
forming a first data storage device;
coupling a semiconductor substrate to the first data storage device using a bonding layer;
forming a switching device in response to etching, through the semiconductor substrate; and
forming a second data storage device, wherein, the second data storage device is spaced from the first data storage device by the switching device.
12. The method of claim 11 , wherein the switching device is a vertically oriented semiconductor device.
13. The method of claim 11 , further including etching through the bonding, layer to form a first electrode.
14. The method of claim 13 , further including forming a second electrode, wherein the second electrode is positioned between the switching device and second data storage device.
15. The method of claim 14 , wherein the switching device extends between the first and second cylindrical electrodes.
16. A method for fabricating a semiconductor memory device, comprising:
forming a first data storage device;
coupling a semiconductor substrate to the first data storage device using a bonding layer;
forming a switching device in response to etching through the semiconductor substrate;
forming a first electrode in response to etching through the bonding layer; and
forming a second data storage device, wherein the second data storage device is spaced from font the first data storage device by the switching device.
17. The method of claim 16 , wherein the step of etching through the semiconductor substrate includes forming a stack of semiconductor layers.
18. The method of claim l 7 , wherein the stack of semiconductor layers is carried by the first electrode.
19. The method of claim 16 , further including, forming a second electrode, wherein the second electrode is positioned between the switching device and second data storage device.
20. The method of claim 14 , wherein the s witching device extends between the first and second cylindrical electrodes.