Method for producing a semiconductor body having a recombination zone, semiconductor component having a recombination zone, and method for producing such a semiconductor component
In a method for producing a semiconductor body, impurities which act as recombination centers in the semiconductor body and form a recombination zone are introduced into the semiconductor body during the process of producing the semiconductor body. In a semiconductor component, comprising a semiconductor body having a front surface and an opposite rear surface, and also a recombination zone formed by impurities between the front and rear surfaces, wherein the impurities act as recombination centers, the surface state density at the front and rear surfaces of the semiconductor body is just as high as the surface state density at a front and rear surface of an identical semiconductor body without a recombination zone.
1. A method for producing a semiconductor body comprising:
providing a first part of the semiconductor body,
introducing impurities into the first part of the semiconductor body, wherein the impurities act as recombination centers in the semiconductor body and form a recombination zone, and wherein the impurities include at least a heavy metal, and
epitaxially producing a second part of the semiconductor body on the first part after introducing the impurities in the first part, wherein during epitaxially producing the second part of the semiconductor body on the first part of the semiconductor body, impurities in the first part of the semiconductor body are diffused to the second part of the semiconductor body.
2. The method according to claim 1 , wherein the impurities are introduced into the semiconductor body in a locally delimited manner.
3. The method according to claim 1 , wherein the impurities are introduced into the semiconductor body at a distance from the surfaces of the semiconductor body.
4. The method according to claim 1 , wherein the heavy metals comprise tungsten or tantalum.
5. The method according to claim 1 , wherein the impurities have a diffusion constant of less than 10 −13 cm 2 /s at 1000° C. in the semiconductor body.
6. The method according to claim 1 , wherein the impurities have a diffusion constant of less than 10 −14 cm 2 /s at 1000° C. in the semiconductor body.
7. The method according to claim 1 , wherein the impurities are implanted.
8. The method according to claim 1 , further comprising diffusing the introduced impurities in the semiconductor body during the epitaxy process, wherein the diffusion of the introduced impurities during the epitaxy process is slower than the rate of growth of the epitaxial layer.
9. The method according to claim 1 , wherein the impurities are introduced into a plurality of partial sections of the semiconductor body, such that regions without impurities remain between the partial sections.
10. The method according to claim 1 , wherein the method steps are repeated at least once.
11. The method according to claim 1 , wherein semiconductor component structures with a drift path between a first electrode at a first surface of the semiconductor body and a second electrode at a second surface of the semiconductor body are formed in the semiconductor body.
12. The method according to claim 11 , wherein the recombination zone is formed at least partly in the drift path.
13. The method according to claim 11 , wherein the recombination zone is formed closer to the first electrode than to the second electrode.
14. The method according to claim 11 , wherein the recombination zone is formed closer to the second electrode than to the first electrode.
15. A method for producing a semiconductor component comprising:
providing a first part of a semiconductor body,
introducing impurities into the first part of the semiconductor body, wherein the impurities act as recombination centers in the semiconductor body and form a recombination zone, and wherein the impurities include at least a heavy metal,
epitaxially producing a second part of the semiconductor body on the first part after introducing the impurities in the first part, wherein during epitaxially producing the second part of the semiconductor body on the first part of the semiconductor body, impurities in the first part of the semiconductor body are diffused to the second part of the semiconductor body,
forming a multiplicity of semiconductor component structures in the semiconductor body, and
severing the semiconductor body in such a way that individual semiconductor components arise.