Recessed contact to semiconductor nanowires
A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.
1. A semiconductor nanowire device, comprising:
a plurality of semiconductor nanowires having a bottom surface and a top surface;
an insulating material which surrounds the plurality of semiconductor nanowires, wherein the insulating material comprises a plurality of discrete insulating shells, each insulating shell of the plurality of discrete insulating shells surrounds a respective semiconductor nanowire of the plurality of semiconductor nanowires; and
an electrode ohmically contacting the top surface of the plurality of semiconductor nanowires, wherein a contact of the electrode to a semiconductor material of the plurality of semiconductor nanowires is dominated by the contact to the top surface of the plurality of semiconductor nanowires,
wherein:
each insulating shell of the plurality of discrete insulating shells is separated from adjacent insulating shells of the plurality of discrete insulating shells by the electrode;
the insulating material extends above the top surface of at least one of the semiconductor nanowires of the plurality of semiconductor nanowires to create a recess between a sidewall of the insulating material and the top surface of the at least one semiconductor nanowire; and
the electrode fills the recess and contacts only the top surface of the at least one semiconductor nanowire without contacting a sidewall of the at least one semiconductor nanowire.
2. The semiconductor nanowire device of claim 1 , wherein the electrode and the top surface of the at least one semiconductor nanowire form an ohmic contact and the electrode extends over a top surface of the insulating material.
3. The semiconductor nanowire device of claim 1 , wherein the electrode comprises a transparent material.
4. The semiconductor nanowire device of claim 3 , wherein the electrode comprises a transparent conductive oxide.
5. The semiconductor nanowire device of claim 1 , wherein a dielectric growth mask material is located between the plurality of semiconductor nanowires.
6. The semiconductor nanowire device of claim 5 , wherein some of the plurality of semiconductor nanowires do not have a recess between the insulating material and their top surface.
7. The semiconductor nanowire device of claim 1 , wherein:
the at least one semiconductor nanowire comprises a silicon or a III-V semiconductor; and
the at least one semiconductor nanowire is positioned on a bottom support or is embedded in an insulating matrix without the bottom support.
8. The semiconductor nanowire device of claim 1 , wherein the at least one semiconductor nanowire is an axial nanowire having a pn junction with a first layer having a first conductivity type over a second layer having an opposite second conductivity type.
9. The semiconductor nanowire device of claim 8 , wherein the pn junction extends perpendicular to an axis of the at least one semiconductor nanowire and the pn junction is located within 300 nm of the top surface of the at least one semiconductor nanowire.
10. The semiconductor nanowire device of claim 1 , wherein the plurality of semiconductor nanowires do not comprise a catalyst particle located on the top surface.
11. The semiconductor nanowire device of claim 1 , wherein the device is a light emitting diode device, an optoelectronic device or a photovoltaic device.