Semiconductor device having barrier metal layer
According to one embodiment, a semiconductor device having an interlayer insulating film, a molybdenum containing layer, a barrier metal layer and a plug material layer is provided. The interlayer insulating film is formed on a substrate or on a conductive layer formed on a substrate. The interlayer insulating film has a hole reaching the substrate or the conductive layer. The molybdenum containing layer is formed in the substrate or in the conductive layer at a bottom portion of the hole. The barrier metal layer is formed on the molybdenum containing layer and on a side surface of the hole. A portion of the barrier metal layer is formed on the side surface contains at least molybdenum. A portion of the barrier metal layer is formed on the molybdenum containing layer includes at least a molybdenum silicate nitride film. The plug material layer is formed via the barrier metal layer.
1. A semiconductor device comprising:
a substrate; and
a laminated body formed on the substrate and serves as an interconnection or an electrode,
wherein the laminated body includes
a semiconductor layer containing silicon which is formed as a first wiring material or an electrode material above the substrate,
a barrier metal layer which is formed on the semiconductor layer and contains molybdenum, and
a metal layer which is formed on the barrier metal layer as a second wiring material or an electrode material,
wherein the barrier metal layer includes a molybdenum silicate nitride film.
2. The semiconductor device according to claim 1 , wherein the laminated body further includes a molybdenum containing layer between the semiconductor layer and the barrier metal layer.
3. The semiconductor device according to claim 2 , wherein the molybdenum containing layer is a molybdenum silicide layer.