Wiring structure and display device
Provided is a technique that allows oxidation of Cu wires to be effectively prevented during plasma processing when forming a passivation film for a display device that utilizes an oxide semiconductor layer. This wiring structure comprises a semiconductor layer (oxide semiconductor) for a thin film transistor, a Cu alloy film (laminated structure comprising a first layer (X) and a second layer (Z)), and a passivation film that are formed on a substrate, starting from the substrate side. The first layer (X) is made of an element that exhibits low electrical resistivity, such as pure Cu; and the second layer contains a plasma-oxidation-resistance improving element. The second layer (Z) is directly connected, at least partially, to the passivation film.
1. A Cu alloy film, for a wiring structure comprising: an oxide semiconductor layer of a thin-film transistor; the Cu alloy film, which is an electrode; and a passivation film, wherein the oxide semiconductor layer, the Cu alloy film, and the passivation film are arranged above a substrate in that order from the substrate,
the Cu alloy film has a multilayer structure including a first layer (X) and second layer (Z) arranged in that order from the substrate,
the first layer (X) is made of pure Cu or a Cu alloy which mainly contains Cu and which is lower in electrical resistivity than the second layer (Z),
the second layer (Z) is made of a Cu—Z alloy containing 2 to 20 atomic percent of at least one element Z selected from the group consisting of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, rare-earth elements, Ge, and Mn in total, and
at least one portion of the second layer (Z) is directly connected to the passivation film, and the first layer (X) is in direct contact with the oxide semiconductor layer.
2. The Cu alloy film of claim 1 , wherein the thickness of the second layer (Z) is 5 nm to 100 nm and is 60% or less of the thickness of the Cu alloy film.
3. The Cu alloy film of claim 1 , wherein the passivation film contains at least one of silicon oxide and silicon oxynitride.
4. The Cu alloy film of claim 2 , wherein the passivation film contains at least one of silicon oxide and silicon oxynitride.
5. A display device, comprising the Cu alloy film of claim 1 .
6. The Cu alloy film of claim 2 , wherein the thickness of the second layer (Z) is from 15 to 50% of the thickness of the Cu alloy film.
7. The Cu alloy film of claim 1 , wherein the second layer (Z) is made of a Cu—Mn alloy containing from 4 to 20 atomic percent of Mn.
8. The Cu alloy film of claim 1 , wherein the second layer (Z) is made of a Cu—Ni alloy containing from 4 to 20 atomic percent of Ni.
9. The Cu alloy film of claim 1 , wherein the second layer (Z) is made of a Cu—Zn alloy containing from 4 to 20 atomic percent of Zn.
10. The Cu alloy film of claim 1 , wherein the second layer (Z) is made of a Cu—Mg alloy containing from 3 to 20 atomic percent of Mg.
11. The Cu alloy film of claim 1 , wherein the second layer (Z) is made of a Cu—Ge alloy containing from 6 to 20 atomic percent of Ge.