Solid-state imaging device, camera, and design method for solid-state imaging device
A solid-state imaging device including two semiconductor substrates arranged in layers is provided. Each semiconductor substrate has a semiconductor region in which a circuit constituting a part of a pixel array is formed. The circuits in the two semiconductor substrates are electrically connected to each other. Each semiconductor substrate includes one or more contact plugs for supplying a voltage to the semiconductor region. The number of the contact plugs of one semiconductor substrate in the pixel array is different from the number of the contact plugs of the other semiconductor substrate in the pixel array.
1. A solid-state imaging device including a first semiconductor substrate and a second semiconductor substrate arranged in layers, the first semiconductor substrate having a first semiconductor region in which a first circuit constituting a part of a pixel array is formed, the second semiconductor substrate having a second semiconductor region in which a second circuit constituting another part of the pixel array is formed, and the first circuit and the second circuit being electrically connected to each other, wherein
the first semiconductor substrate includes one or more first contact plugs for supplying a first voltage to the first semiconductor region and which are electrically connected to an electrically conductive pattern, includes the electrically conductive pattern to which the first voltage is supplied, and includes connection parts that are exposed on a surface of the first semiconductor substrate and that are electrically connected to the electrically conductive pattern,
the second semiconductor substrate includes one or more second contact plugs for supplying a second voltage to the second semiconductor region that are electrically connected to the connection parts, wherein the first voltage supplied from the electrically conductive pattern is supplied as the second voltage to the second semiconductor substrate via the second contact plugs, and
the number of the first contact plugs in the pixel array is different from the number of the second contact plugs in the pixel array.
2. The device according to claim 1 , wherein
the first circuit includes a photoelectric conversion portion, a floating diffusion, and a transistor for transferring charges generated by the photoelectric conversion portion to the floating diffusion, and
the second circuit includes at least one of a transistor for resetting the floating diffusion and a transistor for amplifying signals from the floating diffusion.
3. The device according to claim 1 , wherein the number of the first contact plugs in the pixel array is greater than the number of the second contact plugs in the pixel array.
4. The device according to claim 1 , wherein the number of the second contact plugs in the pixel array is greater than the number of the first contact plugs in the pixel array.
5. The device according to claim 1 , wherein the first semiconductor region and the second semiconductor region have the same conductivity type.
6. The device according to claim 1 , wherein the first semiconductor region and the second semiconductor region have different conductivity types.
7. A camera comprising:
the solid-state imaging device according to claim 1 ; and
a signal processing unit that processes signals obtained by the solid-state imaging device.
8. A design method for a solid-state imaging device including a first semiconductor substrate and a second semiconductor substrate arranged in layers, the first semiconductor substrate having a first semiconductor region in which a first circuit constituting a part of a pixel array is formed, the second semiconductor substrate having a second semiconductor region in which a second circuit constituting another part of the pixel array is formed, and the first circuit and the second circuit being electrically connected to each other, the design method comprising:
determining circuit elements included in the first circuit;
determining circuit elements included in the second circuit;
determining arrangement of one or more first contact plugs for supplying a first constant voltage to the first semiconductor region of the first semiconductor substrate which are electrically connected to an electrically conductive pattern, the first semiconductor substrate includes the electrically conductive pattern to which the first constant voltage is supplied, and further includes connection parts that are exposed on a surface of the first semiconductor substrate and that are electrically connected to the electrically conductive pattern; and
determining arrangement of one or more second contact plugs for supplying a second constant voltage to the second semiconductor region of the second semiconductor substrate that are electrically connected to the connection parts, wherein the first constant voltage supplied from the electrically conductive pattern is supplied as the second constant voltage to the second semiconductor region of the second semiconductor substrate via the second contact plugs, and wherein the number of the first contact plugs in the pixel array is different from the number of the second contact plugs in the pixel array.
9. The device according to claim 1 , wherein the first voltage and the second voltage are ground potential.
10. The device according to claim 1 , wherein the first voltage and the second voltage are power supply voltage.