Nonvolatile semiconductor memory device including floating gate electrodes formed between control gate electrodes and vertically formed along a semiconductor pillar
A nonvolatile semiconductor memory device includes: forming a stacked body by alternately stacking a plurality of interlayer insulating films and a plurality of control gate electrodes; forming a through-hole extending in a stacking direction in the stacked body; etching a portion of the interlayer insulating film facing the through-hole via the through-hole to remove the portion; forming a removed portion; forming a first insulating film on inner faces of the through-hole and the portion in which the interlayer insulating films are removed; forming a floating gate electrode in the portion in which the interlayer insulating films are removed; forming a second insulating film so as to cover a portion of the floating gate electrode facing the through-hole; and burying a semiconductor pillar in the through-hole.
1. A nonvolatile semiconductor memory device comprising:
a stacked body in which a plurality of interlayer insulating films and a plurality of control gate electrodes are alternately stacked and a through-hole extending in a stacking direction is formed;
a semiconductor pillar buried in the through-hole;
a floating gate electrode provided between the control gate electrodes;
a first insulating film provided between the semiconductor pillar and the floating gate electrode, and the control gate electrodes; and
a second insulating film provided between the semiconductor pillar and the floating gate electrode.
2. The device according to claim 1 , wherein a diameter of the through-hole is larger than a thickness of each of the interlayer insulating films.
3. The device according to claim 1 , wherein the floating gate electrode has a circular shape surrounding the semiconductor pillar.
4. The device according to claim 1 , wherein the floating gate electrode is formed of silicon.
5. The device according to claim 1 , wherein the control gate electrodes are formed of a metal or silicon doped with an impurity.
6. The device according to claim 1 , wherein the semiconductor pillar is formed of silicon doped with an impurity.
7. The device according to claim 1 , wherein the interlayer insulating films, the first insulating film, and the second insulating film are formed of silicon oxide.
8. The device according to claim 1 , wherein
a plurality of the through-holes are formed, and
the through-holes are arranged in a matrix form as viewed from the stacking direction.
9. The device according to claim 8 , further comprising:
a connection member connecting lower ends of the two semiconductor pillars adjacent to each other in one direction out of arrangement directions of the through-holes;
a plurality of selection gate electrodes provided on the stacked body, extending in another direction out of the arrangement directions and orthogonal to the one direction, and provided for each column of the semiconductor pillars arranged in the other direction;
a gate insulating film provided between the semiconductor pillar and the selection gate electrode;
a bit line provided above the selection gate electrodes, extending in the one direction, and connected to an upper end of one of the two semiconductor pillars connected to each other by the connection member; and
a source line provide above the selection gate electrodes, extending in the other direction, and connected to an upper end of another of the two semiconductor pillars connected to each other by the connection member,
the control gate electrode being divided for each column of the semiconductor pillars arranged in the other direction.
10. A nonvolatile semiconductor memory device comprising:
a semiconductor pillar;
a plurality of control gate electrodes provided around the semiconductor pillar; and
a plurality of floating gate electrodes provided around the semiconductor pillar,
the semiconductor pillar, each of the control gate electrodes, and each of the floating gate electrodes being away from each other, and
the control gate electrodes and the floating gate electrodes being alternately arranged along a direction in which the semiconductor pillar extends.
11. The device according to claim 10 , wherein a diameter of the semiconductor pillar is larger than a thickness of each of the floating gate electrodes in a direction in which the semiconductor pillar extends.
12. The device according to claim 10 , wherein the floating gate electrodes have a circular shape surrounding the semiconductor pillar.