Microelectromechanical systems (MEMS) resonators and related apparatus and methods
Devices having piezoelectric material structures integrated with substrates are described. Fabrication techniques for forming such devices are also described. The fabrication may include bonding a piezoelectric material wafer to a substrate of a differing material. A structure, such as a resonator, may then be formed from the piezoelectric material wafer.
1. A capped microelectromechanical systems (MEMS) resonator, comprising:
a piezoelectric microelectromechanical systems (MEMS) resonating structure formed on a first wafer, the piezoelectric MEMS resonating structure comprising a resonating body including a piezoelectric material active layer and a layer of silicon; and
a cap wafer capping the piezoelectric MEMS resonating structure, wherein the cap wafer comprises no integrated circuitry,
wherein the cap wafer comprises an integrated heater.
2. The capped MEMS resonator of claim 1 , wherein the cap wafer is formed of an insulating material, and wherein the capped MEMS resonator further comprises through-silicon vias (TSVs) in the cap wafer and configured to conduct electrical signals between the piezoelectric MEMS resonating structure and circuitry formed external to the capped MEMS resonator.
3. The capped MEMS resonator of claim 2 , wherein the insulating material comprises glass.
4. The capped MEMS resonator of claim 2 , wherein the insulating material comprises ceramic.
5. The capped MEMS resonator of claim 1 , wherein the cap wafer is a silicon substrate.
6. The capped MEMS resonator of claim 5 , wherein the silicon substrate is a thinned silicon substrate.
7. The capped MEMS resonator of claim 5 , wherein the silicon substrate is an non-thinned silicon substrate.
8. A capped microelectromechanical systems (MEMS) resonator, comprising:
a piezoelectric microelectromechanical systems (MEMS) resonating structure formed on a first wafer, the piezoelectric MEMS resonating structure comprising a resonating body including a piezoelectric material active layer and a layer of silicon; and
a cap wafer capping the piezoelectric MEMS resonating structure, wherein the cap wafer comprises no integrated circuitry,
wherein the cap wafer comprises an integrated thermistor.
9. The capped MEMS resonator of claim 1 , wherein the cap wafer comprises no active circuitry.
10. The capped MEMS resonator of claim 1 , wherein the cap wafer comprises an access hole formed therein.
11. The capped MEMS resonator of claim 1 , coupled to an external circuit configured to control operation of the piezoelectric MEMS resonating structure.
12. The capped MEMS resonator of claim 11 , wherein the cap wafer is formed of an insulating material, and wherein the capped MEMS resonator further comprises through-silicon vias (TSVs) in the cap wafer and configured to conduct electrical signals between the piezoelectric MEMS resonating structure and circuitry formed external to the capped MEMS resonator.
13. The capped MEMS resonator of claim 8 , wherein the cap wafer is formed of an insulating material, and wherein the capped MEMS resonator further comprises through-silicon vias (TSVs) in the cap wafer and configured to conduct electrical signals between the piezoelectric MEMS resonating structure and circuitry formed external to the capped MEMS resonator.
14. The capped MEMS resonator of claim 8 , wherein the cap wafer is a silicon substrate.
15. The capped MEMS resonator of claim 8 , wherein the cap wafer comprises an access hole formed therein.