Light-emitting device and method for manufacturing light-emitting device
Techniques are provided for manufacturing a light-emitting device having high internal quantum efficiency, consuming less power, having high luminance, and having high reliability. The techniques include forming a conductive light-transmitting oxide layer comprising a conductive light-transmitting oxide material and silicon oxide, forming a barrier layer in which density of the silicon oxide is higher than that in the conductive light-transmitting oxide layer over the conductive light-transmitting oxide layer, forming an anode having the conductive light-transmitting oxide layer and the barrier layer, heating the anode under a vacuum atmosphere, forming an electroluminescent layer over the heated anode, and forming a cathode over the electroluminescent layer. According to the techniques, the barrier layer is formed between the electroluminescent layer and the conductive light-transmitting oxide layer.
1. A method for manufacturing a light-emitting device, comprising the steps of:
forming a transistor including a semiconductor film;
forming a first insulating layer over the transistor;
forming a first electrically conductive film over the first insulating layer, the first electrically conductive film comprising indium oxide and silicon oxide, wherein the first electrically conductive film is a single film;
removing moisture adsorbed in the first electrically conductive film by performing a heat treatment; and
forming an electroluminescence layer comprising an organic compound over the first electrically conductive film.
2. A method according to claim 1 , further comprising a step of forming a barrier layer on the first electrically conductive film, the barrier layer comprising indium oxide and silicon oxide,
wherein a concentration of silicon in the barrier layer is higher than a concentration of silicon in the first electrically conductive film.
3. A method according to claim 1 , wherein the transistor is a top gate transistor.
4. A method according to claim 1 , wherein the semiconductor film comprises a poly-crystalline semiconductor film.
5. A method according to claim 1 , wherein the first electrically conductive film further comprises tin.
6. A method according to claim 1 , wherein the first electrically conductive film further comprises zinc.
7. A method according to claim 1 , wherein the first electrically conductive film is formed by sputtering using a target which comprises indium oxide and silicon oxide.
8. A method for manufacturing a light-emitting device, comprising the steps of:
forming a transistor including a semiconductor film;
forming a first insulating layer over the transistor;
forming a first electrically conductive film over the first insulating layer, the first electrically conductive film comprising indium oxide and silicon oxide , wherein the first electrically conductive film is a single film;
removing moisture adsorbed in the first electrically conductive film by performing a heat treatment at temperature ranging from 200 ° C. to 450 ° C., and
forming an electroluminescence layer comprising an organic compound over the first electrically conductive film.
9. A method according to claim 8 , further comprising a step of forming a barrier layer on the first electrically conductive film, the barrier layer comprising indium oxide and silicon oxide,
wherein a concentration of silicon in the barrier layer is higher than a concentration of silicon in the first electrically conductive film.
10. A method according to claim 8 , wherein the transistor is a top gate transistor.
11. A method according to claim 8 , wherein the semiconductor film comprises a poly-crystalline semiconductor film.
12. A method according to claim 8 , wherein the heat treatment is performed under vacuum atmosphere.
13. A method according to claim 8 , wherein the first electrically conductive film further comprises tin.
14. A method according to claim 8 , wherein the first electrically conductive film further comprises zinc.
15. A method according to claim 8 , wherein the first electrically conductive film is formed by sputtering using a target which comprises indium oxide and silicon oxide.
16. A method for manufacturing a light-emitting device, comprising the steps of:
forming a transistor including a semiconductor film;
forming a first insulating layer over the transistor;
forming a first electrically conductive film over the first insulating layer, the first electrically conductive film comprising indium oxide and silicon oxide , wherein the first electrically conductive film is a single film;
forming a partition layer over an edge portion of the first electrically conductive film;
performing a heat treatment at 200 ° C. to 450 ° C. after forming the partition layer;
forming an electroluminescence layer comprising an organic compound over the first electrically conductive film; and
forming a cathode over the electroluminescence layer, the cathode being capable of transmitting light emitted by the electroluminescence layer.
17. A method according to claim 16 , further comprising a step of forming a barrier layer on the first electrically conductive film, the barrier layer comprising indium oxide and silicon oxide,
wherein a concentration of silicon in the barrier layer is higher than a concentration of silicon in the first electrically conductive film.
18. A method according to claim 16 , wherein the semiconductor film comprises a poly-crystalline semiconductor film.
19. A method according to claim 16 , wherein the first electrically conductive film further comprises tin.
20. A method according to claim 16 , wherein the first electrically conductive film is formed by sputtering using a target which comprises indium oxide and silicon oxide.