Dual-layer magnetic recording structure

1. A dual-layer magnetic recording structure, comprising:

a top magnetic layer having a bit patterned area,

wherein the bit patterned area comprises physically separated islands of magnetic material; and

a bottom magnetic layer comprising

a first region of magnetic grains with a first height and a first magnetic moment and

a second region of magnetic grains with a second height and a second magnetic moment,

wherein the first height is greater than the second height,

wherein the second magnetic moment is less than the first magnetic moment,

wherein adjacent magnetic grains in the first region are exchange-coupled through the top magnetic layer, and

wherein the adjacent magnetic grains and the top magnetic layer are configured to switch together in the dual-layer magnetic recording structure.

2. The dual-layer magnetic recording structure of claim 1 ,

wherein the first region of the bottom magnetic layer includes magnetic materials, and

wherein the second region of the bottom magnetic layer includes the magnetic materials modified by oxidation.

3. The dual-layer magnetic recording structure of claim 1 ,

wherein the top magnetic layer includes continuous magnetic materials, and

wherein the bottom magnetic layer includes granular magnetic materials.

4. The dual-layer magnetic recording structure of claim 1 ,

wherein the first region of the bottom magnetic layer includes magnetic materials, and

wherein the second region of the bottom layer includes the magnetic materials modified by a chemical process selected from a reactive ion etch (RIE) with oxygen gas (O 2 ), tetrafluoromethane (CF 4 ), trifluoromethane (CHF 3 ), chlorine gas (Cl 2 ), and/or other gases; ion implantation; oxidizing the metal particles; oxidative decomposition; and other intermixing processes.

5. The dual-layer magnetic recording structure of claim 1 ,

wherein the islands and the first region of the bottom magnetic layer are exchange-coupled for dual-layer recording bit patterned media.

6. A recording structure, comprising:

a top magnetic layer comprising physically separated islands of magnetic material corresponding to magnetic recording bits; and

a bottom magnetic layer comprising

a first region of magnetic grains with a first height and a first magnetic moment and

a second region of magnetic grains with a second height and a second magnetic moment,

wherein the first height is greater than the second height,

wherein the second region is altered by implanted ions making the second magnetic moment less than the first magnetic moment, and

wherein the top magnetic layer and adjacent magnetic grains in the first region switch together through exchange-coupling between the layers.

7. The recording structure of claim 6 ,

wherein the top magnetic layer includes a coupled continuous magnetic layer.

8. The recording structure of claim 7 ,

wherein the bottom magnetic layer includes a decoupled granular magnetic layer including columnar magnetic grains decoupled by grain boundaries selected from silicon dioxide (SiO 2 ), titanium dioxide (TiO 2 ), and carbon (C).

9. The recording structure of claim 8 ,

wherein the islands of the top magnetic layer and underlying portions of the bottom magnetic layer are configured to switch together as single grains.

10. The recording structure of claim 6 ,

wherein the bottom magnetic layer includes a non-granular magnetic layer.

11. The recording structure of claim 6 ,

wherein magnetic properties in at least another portion of the bottom magnetic layer are unaltered through an absence of implanted ions in the another portion of the bottom magnetic layer, and

wherein the another portion of the bottom magnetic layer is exchange-coupled through the top magnetic layer for creating an exchange-coupled, dual-layer magnetic recording structure.

12. An apparatus, comprising:

a substrate;

a soft underlayer over the substrate;

an interlayer over the soft underlayer;

a first recording layer of a dual-layered recording layer over the interlayer,

wherein the first recording layer comprises a first region of magnetic grains having less height and a reduced magnetic moment compared to a second region of magnetic grains; and

a second recording layer of the dual-layered recording layer,

wherein the second recording layer comprises physically separated islands of magnetic material corresponding to magnetic recording bits, and

wherein the islands cover and are exchange-coupled with the second region of the first recording layer to switch adjacent magnetic grains of the second region.

13. The apparatus of claim 12 ,

wherein the second region of the first recording layer comprises a granular magnetic material comprising magnetic grains and grain boundaries selected from SiO 2 , TiO 2 , and C, and

wherein the first region of the first recording layer comprises the granular magnetic material modified by oxidation or ion implantation.

14. The apparatus of claim 13 ,

wherein the first region of the first recording layer comprises the granular magnetic material modified by oxidation.

15. The apparatus of claim 13 ,

wherein the first region of the first recording layer comprises the granular magnetic material modified by ion implantation.

16. The apparatus of claim 13 ,

wherein the islands of the second recording layer comprise a continuous magnetic material.

17. The apparatus of claim 16 ,

wherein the islands of the second recording layer and underlying magnetic grains of the first recording layer are exchange coupled and switch together as single grains.

18. The apparatus of claim 17 ,

wherein the second recording layer has a thickness of about 8 nm or less.

19. The apparatus of claim 17 , further comprising a carbon overcoat over the dual-layered recording layer.

20. The apparatus of claim 19 ,

wherein the islands of the second recording layer are physically separated by the carbon overcoat.

21. The apparatus of claim 20 ,

wherein the apparatus is configured with an areal recording density of about 1 Tb/in 2 or more.