Light emitting device

1. A light emitting device comprising:

a conductive support member;

a first light emitting structure provided over the conductive support member, the first light emitting structure comprising a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor layer adjacent to the first active layer;

a second light emitting structure provided over the conductive support member, the second light emitting structure comprising a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer adjacent to the second active layer;

a channel layer around lower portions of the first and second light emitting structures;

a first electrode coupled to the first conductive first semiconductor layer;

a second electrode coupled to the second conductive second semiconductor layer;

a third electrode coupled to the first conductive third semiconductor layer;

a fourth electrode coupled to the second conductive fourth semiconductor layer;

a first connection part coupled to the first electrode and the conductive support member;

a second connection part coupled to the second and third electrodes; and

a third connection part coupled to the fourth electrode and having one end provided on the channel layer.

2. The light emitting device of claim 1 , wherein the first electrode is provided on the first conductive first semiconductor layer.

3. The light emitting device of claim 1 , wherein the second electrode is disposed between the second conductive second semiconductor layer and the conductive support member.

4. The light emitting device of claim 3 , wherein the second electrode comprises at least one of an ohmic contact layer, a reflective layer, or a metal layer.

5. The light emitting device of claim 1 , wherein the third electrode is provided on the first conductive third semiconductor layer.

6. The light emitting device of claim 1 , wherein the fourth electrode is disposed between the second conductive fourth semiconductor layer and the conductive support member.

7. The light emitting device of claim 6 , wherein the fourth electrode comprises at least one of an ohmic contact layer, a reflective layer, or a metal layer.

8. The light emitting device of claim 1 , wherein one end of the third connection part is spaced apart from a lateral side of the second light emitting structure and exposed to the lateral side of the second light emitting structure.

9. The light emitting device of claim 1 , wherein a top surface of the channel layer is higher than top surfaces of the first and second active layers.

10. The light emitting device of claim 1 , further comprising an insulating layer provided between the second electrode and the conductive support member and between the fourth electrode and the conductive support member.

11. The light emitting device of claim 10 , wherein a top surface of the insulating layer is exposed to a periphery of a bottom portion of the second light emitting structure.

12. The light emitting device of claim 10 , wherein the insulating layer surrounds a periphery of the channel layer.

13. The light emitting device of claim 1 , wherein the first connection part makes contact with a lateral side of the first conductive first semiconductor layer.

14. The light emitting device of claim 1 , wherein the first connection part is electrically connected to the conductive support member by passing through the channel layer.

15. The light emitting device of claim 1 , wherein the second connection part makes contact with a lateral side of the first conductive third semiconductor layer.

16. The light emitting device of claim 1 , wherein the channel layer surrounds peripheries of the first and second active layers.

17. The light emitting device of claim 1 , wherein the channel layer surrounds peripheries of the second conductive second semiconductor layer and the second conductive fourth semiconductor layer.

18. The light emitting device of claim 1 , further comprising a roughness on the first and second light emitting structures.

19. A light emitting device comprising:

a conductive support member;

a first light emitting structure comprising a first semiconductor layer of a first conductivity type, a first active layer provided over the first semiconductor layer, and a second semiconductor layer of a second conductivity type under the first active layer;

a second light emitting structure provided over the conductive support member, the second light emitting structure comprising a third semiconductor layer of the first conductivity type, a second active layer under the first conductive third semiconductor layer, and a fourth semiconductor layer of the second conductivity type under the second active layer;

a channel layer around lower portions of the first and second light emitting structures;

a first electrode electrically connected to the first semiconductor layer;

a second electrode electrically connected to the second semiconductor layer;

a third electrode electrically connected to the third semiconductor layer;

a fourth electrode electrically connected to the fourth semiconductor layer;

a first connection part electrically connected to the first electrode and the conductive support member;

a second connection part electrically connected to the second and third electrodes; and

a third connection part electrically connected to the fourth electrode and having one end provided on the channel layer,

wherein the first connection part makes contact with a lateral side of the first semiconductor layer,

wherein the second connection part makes contact with a lateral side of the third semiconductor layer, and

wherein one end of the third connection part is spaced apart from a lateral side of the second light emitting structure and exposed to a lateral side of the second light emitting structure.

20. A light emitting device comprising:

a conductive support member;

a first light emitting structure comprising a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor layer under the first active layer;

a second light emitting structure on the conductive support member, the second light emitting structure comprising a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer;

a channel layer around lower portions of the first and second light emitting structures;

a first electrode electrically connected to the first conductive first semiconductor layer;

a second electrode electrically connected to the second conductive second semiconductor layer;

a third electrode electrically connected to the first conductive third semiconductor layer;

a fourth electrode electrically connected to the second conductive fourth semiconductor layer;

a first connection part electrically connected to the first electrode and the conductive support member;

a second connection part electrically connected to the second and third electrodes; and

a third connection part electrically connected to the fourth electrode and having one end provided on the channel layer,

wherein a top surface of the channel layer is higher than top surfaces of the first and second active layers, and

wherein the channel layer surrounds the first and second active layers.