Ceramic heat sink material for pressure contact structure and semiconductor module using the same
View Patent ↗A ceramic heat sink material for a pressure contact structure includes a resin layer on a ceramic substrate. The resin layer can have a durometer (Shore) hardness (A-type) of 70 or less, and an average value of gaps existing in an interface between the ceramic substrate and the resin layer is 3 μm or less. The resin layer can be formed by solidifying a thermosetting resin which is fluidized at a temperature of 60° C.
1. A ceramic heat sink material for a pressure contact structure configured by providing a resin layer on a ceramic substrate, which is any one of a silicon nitride substrate, an aluminum oxide substrate, and an aluminum nitride substrate and has a surface roughness Ra in a range of 0.1 to 5 μm and a three-point bending strength of 300 MPa or more, wherein the resin layer has durometer (Shore) hardness (A-type) of 70 or less, and an average value of gaps existing in an interface between the ceramic substrate and the resin layer is 3 μm or less.
2. The ceramic heat sink material for the pressure contact structure according to claim 1 , wherein the resin layer is formed by solidifying a thermosetting resin which is fluidized at a temperature of 60° C.
3. The ceramic heat sink material for the pressure contact structure according to claim 1 , wherein the resin layer contains inorganic filler particles.
4. The ceramic heat sink material for the pressure contact structure according to claim 1 , wherein the resin layer has durometer (Shore) hardness (A-type) of 10 or more.
5. The ceramic heat sink material for the pressure contact structure according to claim 1 , wherein a thickness of the resin layer is 50 μm or less.
6. A semiconductor module, wherein a pressing member is brought into press-contact with a ceramic heat sink material for a pressure contact structure according to claim 1 .
7. The semiconductor module according to claim 6 , wherein a portion at which a surface of the pressing member is in direct contact with a surface of the ceramic substrate is formed at a time when a pressure contact structure is formed by using the pressing member.
8. The semiconductor module according to claim 7 , wherein the portion at which the surface of the pressing member is in direct contact with the surface of the ceramic substrate is a point contact portion having a maximum diameter of 1 mm or less.
9. The semiconductor module according to claim 8 , wherein a plurality of the point contact portions exist.
10. A semiconductor module comprising:
a ceramic heat sink material for a pressure contact structure configured by providing a resin layer on a ceramic substrate, wherein the resin layer has durometer (Shore) hardness (A-type) of 70 or less, and an average value of gaps existing in an interface between the ceramic substrate and the resin layer is 3 μm or less; and
a pressing member, wherein the pressing member is brought into press-contact with the ceramic heat sink material for the pressure contact structure;
wherein a portion at which a surface of the pressing member is in direct contact with a surface of the ceramic substrate is formed at a time when a pressure contact structure is formed by using the pressing member.
11. The semiconductor module according to claim 10 , wherein the portion at which the surface of the pressing member is in direct contact with the surface of the ceramic substrate is a point contact portion having a maximum diameter of 1 mm or less.
12. The semiconductor module according to claim 11 , wherein a plurality of the point contact portions exist.