Vibration transducer and its manufacturing method
A vibration transducer includes a silicon single crystal vibration beam provided over a silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a direction perpendicular to a surface of the silicon single crystal substrate than in a direction parallel with it, a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate, a plate-like first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam, plate-like second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between, and asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates.
1. A vibration transducer comprising:
a silicon single crystal substrate;
a silicon single crystal vibration beam provided over the silicon single crystal substrate, the vibration beam having a sectional shape that is longer in a height direction that is perpendicular to a surface of the silicon single crystal substrate than in a width direction that is parallel with the surface of the silicon single crystal substrate;
a shell made of silicon, surrounding the vibration beam with a gap, and forming a vacuum room together with the silicon single crystal substrate;
an exciting module configured to excite the vibration beam;
a vibration detecting module configured to detect vibration of the vibration beam, and to measure stress occurring in the vibration beam by measuring a resonance frequency of the vibration beam;
a first electrode plate disposed parallel with the surface of the silicon single crystal substrate, the first electrode plate having one end connected to the vibration beam;
second and third electrode plates disposed parallel with the surface of the silicon single crystal substrate so as to be opposed to each other with the vibration beam interposed in between; and
asperities formed on confronting side surfaces of the vibration beam and the second and third electrode plates,
wherein the vibration beam, and the first, second and third electrode plates are located in the same plane extending parallel with the surface of the silicon single crystal substrate.
2. The vibration transducer according to claim 1 , wherein the asperities on each surface are formed in a streaky structure or in lattice form so as to be continuous in one or both of directions that are parallel with and perpendicular to the surface of the silicon single crystal substrate, respectively.
3. The vibration transducer according to claim 1 , wherein the second electrode plate is used as an excitation electrode configured to excite the vibration beam and the third electrode plate is used as a vibration detection electrode configured to detect vibration of the vibration beam.
4. The vibration transducer according to claim 1 , wherein the first electrode plate is used as an excitation electrode configured to excite the vibration beam and the second or third electrode plate is used as a bias electrode configured to apply a DC bias voltage to the vibration beam and a vibration detection electrode configured to detect vibration of the vibration beam.
5. The vibration transducer according to claim 1 ,
wherein a plurality of the second electrode plates and a plurality of the third electrode plates are disposed on two respective sides of an axis of the vibration beam; and
wherein part of the plurality of second electrode plates are used as excitation electrodes and the other second electrode plates are used as detection electrodes, and part of the plurality of third electrode plates are used as detection electrodes and the other third electrode plates are used as excitation electrodes so that a vibration mode of the vibration beam is selected.
6. The vibration transducer according to claim 1 , wherein the vibration beam is a double-end-fixed beam.