Omnidirectional reflector

1. An omnidirectional structural color (OSC) having a non-periodic layered structure, said OSC comprising:

a multilayer stack having an outer surface and at least five layers, said at least five layers having at least two first index of refraction oxide material layers A 1 and A 2 , at least two second index of refraction oxide material layers B 1 and B 2 , said at least two layers A 1 and A 2 and at least two layers B 1 and B 2 alternately stacked on top of each other;

said at least A 1 , A 2 , B 1 and B 2 layers having a predefined thickness of d A1 , d A2 , d B1 and d B2 , with said d A1 thickness not generally equal to said d A2 , d B1 or said d B2 thickness such that said multilayer stack has a non-periodic layered structure; and

said multilayer stack defining a reflector, said reflector having a single first reflection band with a center wavelength in the visible light spectrum, said single first reflection band being a reflectance of more than 50% of said center wavelength of a band of reflected electromagnetic radiation, said first reflection band also having a full width at half maximum (FWHM) of less than 200 nanometers and a shift of said center wavelength of less than 50 nanometers when said outer surface is exposed to a generally broad band of electromagnetic radiation at angles between 0 and 45 degrees with respect to the normal of said outer surface.

2. The OSC of claim 1 , further comprising at least one third index of refraction material layer C 1 having a predefined thickness d C1 , said at least two layers A 1 and A 2 and said at least two layers B 1 and B 2 alternately stacked on top of each other and on top of said C 1 layer and said d C1 thickness not generally equal to said d A1 or d A2 thickness.

3. The OSC of claim 2 , wherein said band of reflected electromagnetic radiation has a FWHM of less than 100 nanometers.

4. The OSC of claim 2 , wherein said multilayer stack has a second reflection band, said second reflection band being a reflectance of more than 50% of ultraviolet electromagnetic radiation having a center wavelength of less than 400 nanometers.

5. The OSC of claim 2 , wherein said A 1 , A 2 , B 1 , B 2 and C 1 layers are selected from a group consisting of titania, silica, mica, zirconium oxide, niobium oxide, chromium and silver.

6. A process for omnidirectionally reflecting a band of electromagnetic radiation, the process comprising:

providing a multilayer stack having an outer surface and at least five layers, the at least five layers having at least two first index of refraction oxide material layers A 1 and A 2 , at least two second index of refraction oxide material layers B 1 and B 2 , the at least two layers A 1 and A 2 and at least two layers B 1 and B 2 alternately stacked on top of each other;

the at least A 1 , A 2 , B 1 and B 2 layers having a predefined thickness of d A1 , d A2 , d B1 and d B2 , with the d A1 thickness not generally equal to the d A2 , d B1 or d B2 thickness such that the multilayer stack has a non-periodic layered structure and defines a reflector; and

providing a source of broadband electromagnetic radiation;

exposing the multilayer stack to the broad band electromagnetic radiation at angles between 0 and 45 degrees with respect to the normal of the outer surface; and

the reflector reflecting a single first reflection band with a center wavelength in the visible light spectrum, the single first reflection band being a reflectance of more than 50% of the center wavelength of a band of reflected electromagnetic radiation, the single first reflection band also having a full width at half maximum (FWHM) of less than 200 nanometers wide and a shift of the center wavelength of less than 50 nanometers when an outer surface of the multilayer stack is exposed to the generally broad band of electromagnetic radiation at angles between 0 and 45 degrees with respect to the normal of the outer surface.

7. The process of claim 6 , further comprising the multilayer stack having at least one third index of refraction material layer C 1 having a predefined thickness d C1 not equal to the d A1 or d A2 thickness, the at least two layers A 1 and A 2 and the at least two layers B 1 and B 2 alternately stacked on top of each other and on top of the C 1 layer.

8. The process of claim 7 , further comprising the reflector reflecting a second reflection band in the ultraviolet electromagnetic radiation spectrum, the second reflection band having a center wavelength of less than 400 nanometers and being a reflection of more than 50% of the center wavelength.

9. The process of claim 7 , wherein A 1 , B 1 and C 1 are selected from a group consisting of titania, silica, mica, zirconium oxide, niobium oxide, chromium and silver.