Laser reflectometry for substrate processing

1. A system for processing a substrate, the system comprising:

a chamber having a processing volume;

a first laser device to emit a beam at a first wavelength into the processing volume; and

a second laser device to emit a beam at a second wavelength into the processing volume, wherein the second wavelength is greater than the first wavelength, and the second laser device comprises a filter that is transmissive to the second wavelength and attenuates the first wavelength.

2. The system of claim 1 , wherein the filter comprises a first filter that is disposed in a beam path of the first laser device.

3. The system of claim 2 , wherein the first filter is disposed in a beam path of the second laser device.

4. The system of claim 1 , wherein the second laser device is in communication with a sensor.

5. The system of claim 4 , wherein the sensor comprises a filter that attenuates the first wavelength.

6. The system of claim 2 , wherein the second laser device comprises a second filter that selectively attenuates the second wavelength.

7. The system of claim 6 , wherein the second filter is coupled to an actuator.

8. The system of claim 7 , wherein the actuator is coupled to a pivoting member that at least partially contains the second filter.

9. A system for processing a substrate, the system comprising:

a chamber having an internal volume;

a first laser emitter configured to emit a process beam into the internal volume; and

a metrology system disposed at least partially within the internal volume, the metrology system comprising:

a second laser emitter, comprising:

a housing;

a laser source disposed in the housing, the laser source generating a primary beam that is directed through an aperture in the housing;

a first filter disposed on the housing and covering the aperture; and

a sensor having a second filter, the sensor being in communication with the primary beam, wherein the first and second filters are transmissive to the primary beam and attenuate the process beam.

10. The system of claim 9 , wherein the second laser emitter further comprises a third filter.

11. The system of claim 10 , wherein the third filter is movably coupled to the housing.

12. The system of claim 10 , wherein the third filter attenuates the primary beam.

13. The system of claim 9 , wherein the second laser emitter is disposed in the internal volume.

14. The system of claim 13 , wherein the sensor is disposed in the internal volume.

15. A method for processing a substrate, comprising:

emitting a process beam at a first wavelength toward a portion of a substrate;

emitting a primary beam at a second wavelength toward the portion of the substrate, wherein the second wavelength is different than the first wavelength; and

receiving, within a sensor, a reflected beam from the substrate, wherein the reflected beam that is received in the sensor consists essentially of the second wavelength.

16. The method of claim 15 , wherein the primary beam is controlled by an internal optical circuit that is sensitive to the first wavelength and the second wavelength.

17. The method of claim 16 , wherein the first wavelength is filtered from the internal optical circuit.

18. The method of claim 15 , wherein the primary beam includes a first intensity, the method further comprising:

attenuating the primary beam to a second intensity.

19. The method of claim 18 , wherein attenuating the primary beam to the second intensity comprises positioning a filter in the path of the primary beam.

20. The method of claim 19 , wherein the second intensity is about 2 orders of magnitude less than the second wavelength.